2SA1374 - Hitachi Semiconductor

2SA1374 Silicon PNP Epitaxial Transistor

2SA1374 Silicon PNP Epitaxial Application Low frequency amplifier Outline SPAK 1 23 1. Emitter 2. Collector 3. Base 2SA1374 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature Symbol VC.

Features

Collector to emitter saturation voltage Gain bandwidth product Collector output capacitance Note: C 160 to 320 D 250 to 500 V(BR)EBO I CBO I EBO hFE
* VBE VCE(sat) fT Cob 160 — — — — V V MHz pF VCE =
  –12 V, IC =
  –2 mA I C =
  –10 mA, IB =
  –1 mA VCE =
  –12 V, IC =
  –2 mA VCB =
  –10 V, IE = 0, f = 1 MHz 1. The 2SA1374 is grouped by hFE as follows. See characteristic curves of 2SA836. 2 2SA1374 Maximum Collector Dissipation Curve Collector Power Dissipation PC (mW) 300 200 100 0 100 150 50 Ambient Temperature Ta (°C) 3 4.2 Max 1.8 Max 3.2 Max 2.2 Max Unit: mm 0.45 ± 0.1 14.5 Min 0.6 .