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Ordering number:ENN1049E PNP/NPN Epitaxial Planar Silicon Transistors 2SA1253/2SC3135 High-hFE, AF Amp Applications Features · High VEBO. · Wide ASO and high durability against breakdown. Package Dimensions unit:mm 2033A [2SA1253/2SC3135] 4.0 2.2 1.8 3.0 0.6 0.4 0.5 0.4 0.4 15.0 ( ) : 2SA1253 Specifications Absolute Maximum Ratings at Ta = 25˚C Par.
· High VEBO.
· Wide ASO and high durability against breakdown.
Package Dimensions
unit:mm 2033A
[2SA1253/2SC3135]
4.0 2.2
1.8 3.0
0.6
0.4 0.5
0.4 0.4
15.0
( ) : 2SA1253
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Symbol
Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature
VCBO VCEO VEBO
IC ICP PC Tj
Tstg
Electrical Characteristics at Ta = 25˚C
Conditions
Parameter
Symbol
Conditions
Collector Cutoff Current Emitter Cutoff Curren.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SA1250 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 2 | 2SA1250 |
Inchange Semiconductor |
POWER TRANSISTOR |
|
| 3 | 2SA1252 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors |
|
| 4 | 2SA1254 |
Panasonic Semiconductor |
Silicon PNP epitaxial planer type Transistor |
|
| 5 | 2SA1254 |
Panasonic Semiconductor |
Silicon NPN epitaxial planer type Transistor |
|
| 6 | 2SA1255 |
Toshiba Semiconductor |
SILICON PNP TRIPLE DIFFUSED TRANSISTOR |
|
| 7 | 2SA1256 |
Sanyo Semicon Device |
PNP Epitaxial Planar Silicon Transistors |
|
| 8 | 2SA1257 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors |
|
| 9 | 2SA1257 |
Kexin |
PNP Transistors |
|
| 10 | 2SA1258 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Darlington Transistors |
|
| 11 | 2SA1259 |
Sanyo Semicon Device |
PNP/NPN Transistors |
|
| 12 | 2SA1259 |
Inchange Semiconductor |
Silicon PNP Power Transistors |
|