·With TO-3 package ·High transition frequency ·Excellent safe operating area APPLICATIONS ·Power switching applications ·High frequency power amplifier ·Switching regulators ·DC-DC converters PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta= ) SYMBOL VCBO VCEO VEBO IC PC T.
at VBEsat ICBO IEBO hFE COB fT Collector-emitter breakdown voltage IC=-10mA ;IB=0 IC=-0.1mA ;IE=0 IE=-0.1mA ;IC=0 IC=-15A; IB=-1.5A IC=-15A; IB=-1.5A VCB=-120V; IE=0 VEB=-7V; IC=0 IC=-3A ; VCE=-5V IE=0 ; VCB=-10V;f=1.0MHz IC=-2A ; VCE=-10V -120 V Collector-base breakdown voltage -120 V Emitter-base breakdown voltage -7 V Collector-emitter saturation voltage -1.5 V Base-emitter saturation voltage -2.0 V Collector cut-off current -50 µA Emitter cut-off current -50 µA DC current gain 35 200 Output capacitance 600 pF Transition frequency 60 MHz 2 SavantIC Semicondu.
·High Collector-Emitter Breakdown Voltage- V(BR)CEO= -120V(Min) ·High Current Capability ·Wide Area of Safe Operation ·C.
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No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SA104 |
ETC |
Ge PNP Drift Transistor | |
2 | 2SA1040 |
Inchange Semiconductor |
Silicon PNP Power Transistors | |
3 | 2SA1041 |
SavantIC |
Silicon POwer Transistors | |
4 | 2SA1041 |
Inchange Semiconductor |
POWER TRANSISTOR | |
5 | 2SA1041 |
Fujitsu |
Silicon High Speed Power Transistor | |
6 | 2SA1042 |
Inchange Semiconductor |
Silicon PNP Power Transistor | |
7 | 2SA1042 |
Fujitsu |
Silicon High Speed Power Transistor | |
8 | 2SA1044 |
SavantIC |
Silicon POwer Transistors | |
9 | 2SA1044 |
Inchange Semiconductor |
POWER TRANSISTOR | |
10 | 2SA1044 |
Fujitsu |
Silicon High Speed Power Transistor | |
11 | 2SA1045 |
Fujitsu |
Silicon Ring Emitter Darlington Transistors | |
12 | 2SA1046 |
INCHANGE |
PNP Transistor |