2SA1012-D - INCHANGE

2SA1012-D PNP Transistor

·Low Collector Saturation Voltage :VCE(sat)= -0.4(V)(Max)@IC= -3A ·High Switching Speed ·“-D”= TO-252 Package ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high current switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBO L PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 .

Features

trademark INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1012-D VBE(sat) Base-Emitter Saturation Voltage ICBO Collector Cutoff Current IEBO Emitter Cutoff Current hFE-1 DC Current Gain hFE-2 DC Current Gain fT Current-Gain—Bandwidth Product COB Output Capacitance Switching Times ton Turn-on Time tstg Storage Time tf Fall Time IC= -3A; IB= -0.15A VCB= -50V ; IE= 0 VEB= -5V; IC= 0 IC= -1A ; VCE= -1V IC= -3A ; VCE= -1V IC= -1A ; VCE= -4V IE= 0; VCB= -10V; ftest= 1MHz IC= -3A ,RL= 10Ω, IB1= -IB2= -0.15A,VCC= -30V  hFE-1 Classifications O Y 70-140 120-240 .