Quick reference data VR = 800 - 1000V IF = 3.0A trr = 75nS IR = 2µA Features Very low reverse recovery time Glass passivated for hermetic sealing Low switching losses Soft, non-snap off, recovery characteristics Avalanche capability Absolute Maximum Ratings Electrical specifications @ TA = 25°C unless otherwise specified. Symbol Working Reverse .
Very low reverse recovery time Glass passivated for hermetic sealing Low switching losses Soft, non-snap off, recovery characteristics Avalanche capability Absolute Maximum Ratings Electrical specifications @ TA = 25°C unless otherwise specified. Symbol Working Reverse Voltage Average Forward Current @ 55°C, lead length 0.375" Repetitive Surge Current @ 55°C in free air, lead length 0.375" Non-Repetitive Surge Current (tp = 8.3mS @ VR & TJMAX) Storage Temperature Range VRWM IF(AV) IFRM IFSM TSTG 2P F F 8 800 3.0 9.0 45.0 -55 to +175 2P F F 0 1000 Units V A A A °C Revision: Febr.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2PFF0 |
Semtech Corporation |
(2PFF0 / 2PFF8) Axial Leaded Hermetically Sealed Superfast Recovery Rectifier Diode | |
2 | 2PFF6 |
Semtech Corporation |
Axial Leaded Hermetically Sealed Superfast Recovery Rectifier Diode | |
3 | 2PF140 |
Semtech Corporation |
AXIAL LEADED HERMETICALLY SEALED HIGH VOLTAGE FAST RECTIFIER DIODE | |
4 | 2PFT05 |
Semtech Corporation |
(2PFTxx) RECTIFIER | |
5 | 2PFT1 |
Semtech Corporation |
(2PFTxx) RECTIFIER | |
6 | 2PFT15 |
Semtech Corporation |
(2PFTxx) RECTIFIER | |
7 | 2PFT2 |
Semtech Corporation |
(2PFTxx) RECTIFIER | |
8 | 2P05M |
NEC |
Opto-Electronic Devices | |
9 | 2P102A |
Fairchild Semiconductor |
FDFS2P102A | |
10 | 2P1M |
NEC |
Opto-Electronic Devices | |
11 | 2P2304NZF |
ON Semiconductor |
Four Output PCI-X and General Purpose Buffer | |
12 | 2P2M |
NEC |
Opto-Electronic Devices |