The UTC 2N80-C provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES0 * RDS(ON) ≤ 5.6 Ω @ VGS=10V, ID=1.0A * Low Reverse Transfer Capacitance * Fast Switching Capability * Avalanche Energy Specified * Improved dv/dt Capability, High Ruggedness SYM.
* RDS(ON) ≤ 5.6 Ω @ VGS=10V, ID=1.0A
* Low Reverse Transfer Capacitance
* Fast Switching Capability
* Avalanche Energy Specified
* Improved dv/dt Capability, High Ruggedness
SYMBOL
Power MOSFET
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
2N80L-TA3-T
2N80G-TA3-T
2N80L-TF3-T
2N80G-TF3-T
2N80L-TF1-T
2N80G-TF1-T
2N80L-TM3-T
2N80G-TM3-T
2N80L-TN3-R
2N80G-TN3-R
Note: Pin Assignment: G: Gate D: Drain S: Source
Package
TO-220 TO-220F TO-220F1 TO-251 TO-252
Pin Assignment
1
2
3
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
Packing
Tube Tube Tube Tube Tape Reel
.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2N80 |
Inchange Semiconductor |
N-Channel MOSFET Transistor | |
2 | 2N80 |
Unisonic Technologies |
800V N-CHANNEL POWER MOSFET | |
3 | 2N80Z |
Unisonic Technologies |
800V N-CHANNEL POWER MOSFET | |
4 | 2N827 |
Motorola |
PNP germanium mesa transistor | |
5 | 2N828 |
Motorola |
PNP germanium epitaxial mesa transistor | |
6 | 2N828A |
Motorola |
PNP germanium epitaxial mesa transistors | |
7 | 2N829 |
Motorola |
PNP germanium epitaxial mesa transistors | |
8 | 2N834 |
New Jersey Semi-Conductor |
NPN HIGH SPEED SATURATED LOGIC SWITCHES | |
9 | 2N834 |
Motorola |
NPN silicon epitaxial transistors | |
10 | 2N835 |
Motorola |
NPN silicon epitaxial transistors | |
11 | 2N838 |
Motorola |
PNP germanium epitaxial mesa transistor | |
12 | 2N840 |
Motorola |
NPN silicon annular transistors |