2N7522 - International Rectifier

2N7522 P-Channel Transistor

www.DataSheet4U.com Preliminary Data Sheet Repetitive Avalanche and dv/dt Rated MOSFET Transistor P-Channel 200Volt, 0.505 Ω , RAD Hard MOSFET Package: SMD-0.5 Product Summary Hex Size 3 Technology RAD Hard BV DSS -200V RDS (on) 0.505 Ω ID -8.0A 2N7522 R5 Absolute Maximum Ratings Parameter ID @ VGS = -12V, TC = 25°C ID @ VGS = -12V, TC = 100°C PD @ TC = 2.

Features

e Forward Gate-to-Source Leakage Reverse Total Gate Charge Min -200 -2.0 Typ. Max 0.505 -4.0 -10 -25 -100 100 43 Units V Ω V µA µA nA nA nC Test Conditions VGS=0V, ID=-1.0mA VGS=-12V, ID=-5.0A VDS=VGS, ID=-1.0mA VDS= -160V, VGS=0V VDS =-160V, TJ=125°C VGS=-20V VGS=20V VGS=-12V, ID=-8.0A Thermal Resistance Parameter RthJC Junction-to-Case Min Typ. Max 1.67 Units °C/W 01/23/01 Test Conditions DataSheet4U.com DataSheet 4 U .com .