N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Logic-level compatible • Very fast switching • Trench MOSFET technology • ElectroStatic Discharge (ESD) protection > 2 kV HBM 3. Applications • Relay driver • High-speed.
• Logic-level compatible
• Very fast switching
• Trench MOSFET technology
• ElectroStatic Discharge (ESD) protection > 2 kV HBM
3. Applications
• Relay driver
• High-speed line driver
• Low-side load switch
• Switching circuits
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
Min Typ Max
VDS drain-source voltage Tj = 25 °C
VGS gate-source voltage
ID
drain current
VGS = 10 V; Tamb = 25 °C
--
-20 -
[1] -
-
60 20 270
VGS = 10 V; Tsp = 25 °C
- - 330
Static characteristics
RDSon
drain-source on-state VGS = 10 V; ID = 200 mA; Tj = 25 °C resistan.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2N7002NXAK |
nexperia |
N-channel Trench MOSFET | |
2 | 2N7002 |
Fairchild Semiconductor |
N-channel FET | |
3 | 2N7002 |
GME |
N-Channel Power Mosfet | |
4 | 2N7002 |
nexperia |
300mA N-channel MOSFET | |
5 | 2N7002 |
MCC |
N-Channel MOSFET | |
6 | 2N7002 |
Microchip |
N-channel MOSFET | |
7 | 2N7002 |
Rectron |
N-Channel Enhancement Mode Power MOSFET | |
8 | 2N7002 |
ST Microelectronics |
N-Channel MOSFET | |
9 | 2N7002 |
Central Semiconductor |
SILICON N-CHANNEL MOSFET | |
10 | 2N7002 |
Philips |
N-channel vertical D-MOS transistor | |
11 | 2N7002 |
Unisonic Technologies |
N-CHANNEL POWER MOSFET | |
12 | 2N7002 |
ON Semiconductor |
N-channel FET |