The 2N7002D is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and ot.
● Simple Drive Requirement
● Small Package Outline
● ROHS Compliant
● ESD Rating = 2000V HBM
Applications:
● High density cell design for low RDS(ON)
● Voltage controlled small signal switching.
● Rugged and reliable.
● High saturation current capability.
● High-speed switching.
● Not thermal runaway.
● The soldering temperature and time shall
not exceed 260℃ for more than 10 seconds.
(SOT-23) Top View
GENERAL DESCRIPTION
The 2N7002D is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process i.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2N7002 |
Fairchild Semiconductor |
N-channel FET | |
2 | 2N7002 |
GME |
N-Channel Power Mosfet | |
3 | 2N7002 |
nexperia |
300mA N-channel MOSFET | |
4 | 2N7002 |
MCC |
N-Channel MOSFET | |
5 | 2N7002 |
Microchip |
N-channel MOSFET | |
6 | 2N7002 |
Rectron |
N-Channel Enhancement Mode Power MOSFET | |
7 | 2N7002 |
ST Microelectronics |
N-Channel MOSFET | |
8 | 2N7002 |
Central Semiconductor |
SILICON N-CHANNEL MOSFET | |
9 | 2N7002 |
Philips |
N-channel vertical D-MOS transistor | |
10 | 2N7002 |
Unisonic Technologies |
N-CHANNEL POWER MOSFET | |
11 | 2N7002 |
ON Semiconductor |
N-channel FET | |
12 | 2N7002 |
NTE |
N-channel FET |