2N6796 - Seme LAB

2N6796 TMOS FET TRANSISTOR

2N6796 MECHANICAL DATA Dimensions in mm (inches) 8 .8 9 (0 .3 5 ) 9 .4 0 (0 .3 7 ) 7 .7 5 (0 .3 0 5 ) 8 .5 1 (0 .3 3 5 ) TMOS FET TRANSISTOR N – CHANNEL 6 .1 0 (0 .2 4 0 ) 6 .6 0 (0 .2 6 0 ) 1 2 .7 0 (0 .5 0 0 ) m in . 0 .8 9 m a x . (0 .0 3 5 ) 7 .7 5 (0 .3 0 5 ) 8 .5 1 (0 .3 3 5 ) d ia . FEATURES 5 .0 8 (0 .2 0 0 ) ty p . • VDSS = 100V 2 .5 4 (0 .1.

Features

5 .0 8 (0 .2 0 0 ) ty p .
• VDSS = 100V 2 .5 4 (0 .1 0 0 ) 1 0 .6 6 (0 .0 2 6 ) 1 .1 4 (0 .0 4 5 ) 0 .7 1 (0 .0 2 8 ) 0 .8 6 (0 .0 3 4 ) 2 3
• ID = 8A
• RDSON = 0.18Ω 4 5 ° TO
  –39 METAL PACKAGE Underside View PIN 1
  – Source PIN 2
  – Gate PIN 3
  – Drain Case ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) Drain
  –Source Voltage VDGR Drain
  –Gate Voltage (RGS = 1.0mΩ) VGS Gate
  –Source Voltage ID Drain Current Continuous IDM Drain Current Pulsed PD Total Device Dissipation @ TC = 25°C Derate above 25°C TJ , TSTG Operating and Storage Junction Temperature Range THERMAL CHARACTERISTI.