2N6770T1 - Microsemi

2N6770T1 N-CHANNEL MOSFET

TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http://www.microsemi.com Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 DEVICES N-CHANNEL MOSFET Qualified per MIL-PRF-19500/543 2N6770 2N6770T1 LEVELS JAN JANTX JANTXV ABSOLUTE MAXI.

Features

Drain-Source Breakdown Voltage VGS = 0V, ID = 1mAdc Gate-Source Voltage (Threshold) VDS ≥ VGS, ID = 0.25mA VDS ≥ VGS, ID = 0.25mA, Tj = +125°C VDS ≥ VGS, ID = 0.25mA, Tj = -55°C Gate Current VGS = ±20V, VDS = 0V VGS = ±20V, VDS = 0V, Tj = +125°C Drain Current VGS = 0V, VDS = 400V VGS = 0V, VDS = 500V, Tj = +125°C VGS = 0V, VDS = 400V, Tj = +125°C Static Drain-Source On-State Resistance VGS = 10V, ID2 = 7.75A pulsed VGS = 10V, ID1 = 12A pulsed Tj = +125°C VGS = 10V, ID2 = 7.75A pulsed Symbol Min. Max. V(BR)DSS 500 VGS(th)1 2.0 4.0 VGS(th)2 1.0 VGS(th)3 5.0 IGSS1 IGSS2 ±100 ±200 IDS.