2N6659X - TT

2N6659X N-CHANNEL ENHANCEMENT MODE MOSFET

N-CHANNEL ENHANCEMENT MODE MOSFET 2N6659X • Switching Regulators • Converters • Motor Drives ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated) VDS Drain – Source Voltage 35V VGS Gate – Source Voltage ±20V ID Drain Current TC = 25°C 1.4A ID Drain Current TC = 100°C 1.0A IDM1 Pulsed Drain Current 3A PD Power Dissipation TC = 25°.

Features

tterworth, Leicestershire, LE17 4JB Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: [email protected] Document Number 9688 Website: http://www.semelab-tt.com Issue 2 Page 1 of 3 N-CHANNEL ENHANCEMENT MODE MOSFET 2N6659X ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise stated) Symbols Parameters Test Conditions V(BR)DSS VGS(th) Drain
  – Source Breakdown Voltage Gate Threshold Voltage VGS = 0 VDS = VGS ID = 10µA ID = 1.0mA IGSS Gate
  – Body Leakage Current VGS = ±15V VDS = 0V TC =125°C VDS = 35V VGS = 0 IDSS Zero Gate Voltage Drain Current VDS = 35V VGS.