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The CENTRAL SEMICONDUCTOR 2N6530 Series are NPN silicon Darlington transistors designed for power applications requiring extremely high gain. MAXIMUM RATINGS: (TC=25°C unless otherwise noted) Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Collector.
5.0V, TC=125°C IEBO VEB=5.0V 5.0 5.0 5.0 BVCER IC=200mA, RBE=100Ω 80 100 100 BVCEO IC=200mA 80 100 100 BVCEV IC=200mA, VEB=1.5V 80 100 100 VCE(SAT) IC=3.0A, IB=6.0mA 3.0 VCE(SAT) IC=5.0A, IB=10mA 2.0 2.0 VCE(SAT) IC=8.0A, IB=80mA 3.0 3.0 3.0 VBE(ON) VCE=3.0V, IC=3.0A 2.8 VBE(ON) VCE=3.0V, IC=5.0A 2.8 2.8 VBE(ON) VCE=3.0V, IC=8.0A 4.5 4.5 4.5 2N6533 MIN MAX 1.0 0.5 5.0 5.0 120 120 120 2.0 3.0 2.8 4.5 UNITS mA mA mA mA V V V V V V V V V (CONTINUED ON REVERSE SIDE) R0 2N6530 SERIES NPN POWER TRANSISTOR ELECTRICAL CHARACTERISTICS (Continued) SYMBOL TEST .
2N6531 - SavantIC
·With TO-220 package ·DARLINGTON ·High DC current gain APPLICATIONS ·Power switching ·Hammer drivers ·Series and shunt r.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2N653 |
Motorola |
PNP Transistor |
|
| 2 | 2N6530 |
ETC |
8-AMPERE N-P-N DARLINGTON POWER TRANSISTORS |
|
| 3 | 2N6530 |
SavantIC |
Silicon Power Transistor |
|
| 4 | 2N6530 |
Central Semiconductor |
NPN POWER TRANSISTOR |
|
| 5 | 2N6532 |
ETC |
8-AMPERE N-P-N DARLINGTON POWER TRANSISTORS |
|
| 6 | 2N6532 |
SavantIC |
Silicon Power Transistor |
|
| 7 | 2N6532 |
Central Semiconductor |
NPN POWER TRANSISTOR |
|
| 8 | 2N6533 |
ETC |
8-AMPERE N-P-N DARLINGTON POWER TRANSISTORS |
|
| 9 | 2N6533 |
SavantIC |
Silicon Power Transistor |
|
| 10 | 2N6533 |
Central Semiconductor |
NPN POWER TRANSISTOR |
|
| 11 | 2N6534 |
Seme LAB |
Bipolar NPN Device |
|
| 12 | 2N6534 |
SavantIC |
Silicon Power Transistor |
|
