The 2N6483 thru 2N6485 series of N-channel monolithic dual JFETs is designed for low to medium frequency low noise differential amplifier applications requiring tight match and high common-mode rejection. Absolute Maximum Ratings (25°o Gate-Drain or Gate-Source Voltage Gate Current -50V 50 mA Device Dissipation (Each Side), Ta = 85°C (Derate 2.56 mW/°C).
ce Breakdown Voltage Gate-Source Cutoff Voltage Gate-Source Voltage Gate Operating Current Saturation Drain Current Common-Source Forward Transconductance Common-Source Forward Transconductance Common Source Output Conductance Common-Source Output Conductance Common-Source Input Capacitance Common-Source Reverse Transfer Capacitance Equivalent Input Noise Voltage CONDITIONS Vgs" -30V, V DS -0 IG--1 WA. Vds-0 V DS - 20V, Irj-lnA 150 C V D G J 20V, D l - 200 (iA VqS" 20V, VGS-0, (Note 1) V D S" 20V, VGS" 0, (Note 1) V D G - 20V, Dl " 200 uA, [Note 1) V D S- 20V, V GS = V DG - 20V, Dl = 200 uA.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2N6480 |
RCA |
Power Transistor | |
2 | 2N6481 |
RCA |
Power Transistor | |
3 | 2N6482 |
RCA |
Power Transistor | |
4 | 2N6483 |
Intersil |
Low Noise Dual N-Channel JFET | |
5 | 2N6483 |
National Semiconductor |
N-Channel Monolithic Dual JFET | |
6 | 2N6485 |
National Semiconductor |
N-Channel Monolithic Dual JFET | |
7 | 2N6485 |
Intersil |
Low Noise Dual N-Channel JFET | |
8 | 2N6486 |
SavantIC |
Silicon NPN Power Transistors | |
9 | 2N6486 |
CDIL |
NPN PLASTIC POWER TRANSISTORS | |
10 | 2N6486 |
Central Semiconductor |
COMPLEMENTARY SILICON POWER TRANSISTORS | |
11 | 2N6487 |
ON Semiconductor |
COMPLEMENTARY SILICON POWER TRANSISTORS | |
12 | 2N6487 |
STMicroelectronics |
COMPLEMENTARY SILICON POWER TRANSISTORS |