2N6341 - Motorola

2N6341 NPN Transistor

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by 2N6338/D High-Power NPN Silicon Transistors . . . designed for use in industrial–military power amplifier and switching circuit applications. • High Collector–Emitter Sustaining Voltage — VCEO(sus) = 100 Vdc (Min) — 2N6338 VCEO(sus) = 120 Vdc (Min) — 2N6339 VCEO(sus) = 140 Vdc (Min) — 2N6340 .

Features

Peak ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Base Current ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Total Device Dissipation ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ @ TC = 25_C Derate above 25_C ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Operating and Storage Junction ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Temperature Range Symbol VCB VCEO VEB IC IB PD TJ, Tstg 2N6338 120 100 2N6339 2N6340 140 160 120 140 6.0 25 50 10 200 1.14
  – 65 to + 200 2N6341 180 150 Unit Vdc Vdc Vdc Adc Adc Watts W/°C _C ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ THERMAL CHARACTERISTICS ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Characteristic Thermal Resistance, Junction to Case ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ .