Recherchez avec le numéro de pièce ainsi que le fabricant ou la description
SILICON NPN TRANSISTOR TECHNICAL DATA Devices 2N6232 • FAST SWITCHING • LOW SATURATION VOLTAGE 10 AMP 100 V MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current – Peak (1) Base Current – Continuous Total Power Dissipation @ TC = 250C Operating & Storage Junction Temperature Range THERMAL CHARACTE.
Min. Max.
Unit
100
Vdc
0.2
uAdc
0.1
mAdc
10
uAdc
6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
10604 Page 1 of 2
2N6232
ELECTRICAL CHARACTERISTICS (con’t)
Characteristics
ON CHARACTERISTICS (2)
DC Current Gain IC = 5.0 Adc, VCE = 2.0 Vdc
Collector-Emitter Saturation Voltage IC = 5 Adc, IB = .5 Adc
Base-Emitter Saturation Voltage IC = 10 Adc, IB = 1.0 Adc
DYNAMIC CHARACTERISTICS
Output Capacitance VCB = 10 Vdc, IE = 0, f = 1.0 MHz
SWITCHING CHARACTERISTICS
IC = 5.0 Adc, IB1= Ib2 = 0.5 A Duty Cycle
– 2.0% (2) Pulse Test: Pulse Width = 300µs, .
2N6232 - Seme LAB
2N6232 Dimensions in mm (inches). 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) 12.70 (0.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2N6230 |
Seme LAB |
Bipolar PNP Device |
|
| 2 | 2N6230 |
Central Semiconductor |
(2N6229 - 2N6231) SILICON POWER TRANSISTOR |
|
| 3 | 2N6230 |
SavantIC |
Silicon Power Transistor |
|
| 4 | 2N6231 |
Central Semiconductor |
(2N6229 - 2N6231) SILICON POWER TRANSISTOR |
|
| 5 | 2N6231 |
SavantIC |
Silicon Power Transistor |
|
| 6 | 2N6233 |
Motorola Inc |
4 AMPERE POWER TRANSISTOR |
|
| 7 | 2N6234 |
Seme LAB |
Bipolar NPN Device |
|
| 8 | 2N6235 |
Seme LAB |
Bipolar NPN Device |
|
| 9 | 2N6235 |
Motorola Inc |
4 AMPERE POWER TRANSISTOR |
|
| 10 | 2N6235 |
Inchange Semiconductor |
Silicon NPN Power Transistor |
|
| 11 | 2N6236 |
Digitron Semiconductors |
SILICON CONTROLLED RECTIFIERS |
|
| 12 | 2N6236 |
Electronix |
SILICON CONTROLLED RECTIFIERS |
|