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·DC Current Gain- : hFE = 20-100@ IC= -2.5A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -60V(Min) ·Complement to Type 2N6130 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in general-purpose amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER V.
-30mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -7A; IB= -1.4A VBE(on) Base-Emitter On Voltage IC= -7A; VCE= -4V ICBO Collector Cutoff Current VCB= -60V; IE= 0 ICEO Collector Cutoff Current VCE= -60V; IB= 0 IEBO Emitter Cutoff Current VEB= -5V; IC= 0 hFE-1 DC Current Gain IC= -2.5A ; VCE= -4V hFE-2 DC Current Gain IC= -7A ; VCE= -4V fT Current-Gain—Bandwidth Product IC= -0.5A ; VCE= -4V 2N6133 MIN MAX UNIT -60 V -1.4 V -3.0 V -0.1 mA -1.0 mA -1.0 mA 20 100 5 2.5 MHz Notice： ISC reserves the rights to make changes of the content herein the da.
2N6133 - Central Semiconductor
Standard Optional Power Transistors TO-220 Case TO-220 TYPE NO. IC (A) MAX 4.0 4.0 4.0 7.0 7.0 7.0 7.0 2N6040 2N6041 2.
2N6133 - SavantIC
·With TO-220 package ·High power dissipation ·Complement to NPN type : 2N6129 2N6130 2N6131 APPLICATIONS ·Power amplifie.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2N6130 |
Central Semiconductor |
(2N6130 - 2N6134) NPN SILICON TRANSISTOR |
|
| 2 | 2N6130 |
SavantIC |
Silicon Power Transistor |
|
| 3 | 2N6130 |
INCHANGE |
NPN Transistor |
|
| 4 | 2N6131 |
Central Semiconductor |
NPN SILICON TRANSISTOR |
|
| 5 | 2N6131 |
SavantIC |
Silicon Power Transistor |
|
| 6 | 2N6131 |
INCHANGE |
NPN Transistor |
|
| 7 | 2N6131 |
BLUE ROCKET ELECTRONICS |
Silicon NPN transistor |
|
| 8 | 2N6132 |
INCHANGE |
PNP Transistor |
|
| 9 | 2N6132 |
Central Semiconductor |
NPN SILICON TRANSISTOR |
|
| 10 | 2N6132 |
Advanced Semiconductor |
Silicon PNP Power Transistor |
|
| 11 | 2N6132 |
SavantIC |
(2N6132 - 2N6134) Silicon Power Transistor |
|
| 12 | 2N6134 |
Central Semiconductor |
NPN SILICON TRANSISTOR |
|