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The -30V InterFET 2N5949 JFET is targeted for low noise switching and audio amplifier applications. Gate leakages are typically less than 10pA at room temperatures. Source 1 Drain 2 SOT23 Top View 3 Gate TO-92 Bottom View Gate 3 Drain 2 Source 1 Product Summary Parameters BVGSS Gate to Source Breakdown Voltage IDSS Drain to Source Saturation Current .
• InterFET N0032H Geometry
• Low Noise: 7 nV/√Hz Typical
• Low Ciss: 6pF Typical
• RoHS Compliant
• SMT, TH, and Bare Die Package options.
Applications
• Audio Amplifiers
• General Purpose Amplifiers
• Switches
Description
The -30V InterFET 2N5949 JFET is targeted for low noise switching and audio amplifier applications. Gate leakages are typically less than 10pA at room temperatures.
Source 1 Drain 2
SOT23 Top View 3 Gate
TO-92 Bottom View
Gate 3 Drain 2 Source 1
Product Summary
Parameters
BVGSS Gate to Source Breakdown Voltage
IDSS
Drain to Source Saturation Current
VGS(off) Gate to.
2N5949 - Central Semiconductor
The CENTRAL SEMICONDUCTOR 2N5949 Series devices are silicon N-Channel JFETs designed for switching, RF amplifier and mi.
2N5949 - National Semiconductor
The 2N5949 thru 2N5953 series of N-channel JFETs is characterized for low frequency to VHF amplifiers requiring tightly .
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2N5941 |
ETC |
NPN SILICON RF POWER TRANSISTORS |
|
| 2 | 2N5942 |
ETC |
NPN SILICON RF POWER TRANSISTORS |
|
| 3 | 2N5943 |
Motorola |
HIGH FREQUENCY TRANSISTOR |
|
| 4 | 2N5943 |
ASI |
NPN SILICON HIGH FREQUENCY TRANSISTOR |
|
| 5 | 2N5944 |
HGSemi |
HG RF POWER TRANSISTOR |
|
| 6 | 2N5944 |
Microsemi |
RF & MICROWAVE TRANSISTOR |
|
| 7 | 2N5944 |
ETC |
NPN SILICON RF POWER TRANSISTORS |
|
| 8 | 2N5944 |
Motorola |
NPN SILICON RF POWER TRANSISTORS |
|
| 9 | 2N5945 |
ETC |
NPN SILICON RF POWER TRANSISTORS |
|
| 10 | 2N5945 |
ASI |
NPN SILICON RF POWER TRANSISTOR |
|
| 11 | 2N5945 |
NJS |
NPN SILICON RF POWER TRANSISTOR |
|
| 12 | 2N5945 |
Motorola |
NPN SILICON RF POWER TRANSISTORS |
|