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2N5911 - Siliconix

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2N5911 dual n-channel JFET

matched dual -- •n-channel JFETs designed for • • • 0- 1ft Wideband Differential Z Amplifiers ~ ABSOLUTE MAXIMUM RATINGS (25°C) Gate·to·Gate Voltage ......... ±80V Gate·Drain or Gate·Source Voltage ..........•... -25 V Gate Current . 50 rnA Device Dissipation (Each Side), (Derate 3 mW;oC) .. 367mW Total Dev.

Features

s en NF Characteristic Gate Reverse Current Gate
·Source Breakdown Voltage Gate
·Source Cutoff Voltage Gate
·Source Voltage Gate Operating Current Saturation Drain Current (Note 1) Common~Source Forward Transconductance Common-Source Forward Transconductance Common-Source Output Conductance Common~Source Output Conductance Common-Suurct! input Capacitance Common-Source Reverse Transfer Capacitance Equivalent Short Circuit Input NOise Voltage Spot Noise Figure Min -25 -1 -0.3 7 5000 5000 Max -100 -250 -5 -4 -100 -100 40 10,000 10,000 100 150 5 1.2 20 1 Unit Test Conditions pA VGS = -15 V. VOS .

The same part from a different manufacturer

Datasheet 2N5911 - Micross 2N5911

2N5911 MONOLITHIC DUAL N-CHANNEL JFET Linear Systems replaces discontinued Siliconix & National 2N5911 The 2N5911 are m.

Datasheet 2N5911 - National Semiconductor 2N5911

The 2N5911 thru2N5912 series of N-channel monolithic dual JFETs is designed for wideband, low noise differen- tial ampli.

Datasheet 2N5911 - Calogic LLC 2N5911

Dual N-Channel JFET High Frequency Amplifier CORPORATION 2N5911 / 2N5912 FEATURES ABSOLUTE MAXIMUM RATINGS (TA = 25oC u.

Datasheet 2N5911 - Solitron Devices 2N5911

The -25V 2N5911 and 2N5912 JFET’s are targeted for wideband differential amplifiers. Gate leakages are less than 10pA at.

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