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2N5839 - RCA

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2N5839 Power Transistors

DlCIBLJI] Solid State Division FileNo. 410 Power Transistors 2N5838 2N5839 2N5840 RCA 2N5838;2N5839 and 2N5840** are epitaxial silicon n-p-n power transistors utilizing a multiple-emitter-site structure. These devices employ the popular ]EDEC TO-3 package; they differ mainly in voltage, currentgain, and VCE(sat) ratings. Featuring high breakdown voltage ra.

Features


• Maximum safe-area-of-operation curves
• Low saturation voltages
• High voltage ratings VeER(s.s) = 375 V (2N5840) 300 V (2N5839) 275 V (2N5838)
• High dissipation rating PT = 100W !< z ~S! ~" ~ (IlCZ:~ a~~ ~~ ~~ t~il ." . ."~. .00ou.!::",zu""., S ~~ ~ ~B NOTE: CURRENT DERATING AT CONSTANT VOLTAGE APPLIES ONLY TO THE DISSIPATIONLIMITED PORTION AND THE IS/b-LIMITED PORTION OF MAXIMUM OPERATING AREA CURVES{FIG.Z631 00 NOT DERATE THE SPECIFIED VALUE FOR [C MAX. 100 75 50 25 25 ~ 75 100 125 150 175 200 CASE TEMPERATURE ITc) _
· c Fig. 1 - Derating curves for aI/ types. 12
·69 25.

The same part from a different manufacturer

Datasheet 2N5839 - SavantIC 2N5839

·With TO-3 package ·Low collector saturation voltage ·High breakdown voltage APPLICATIONS ·For use in switching power su.

Datasheet 2N5839 - Motorola Inc 2N5839

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