DlCIBLJI] Solid State Division FileNo. 410 Power Transistors 2N5838 2N5839 2N5840 RCA 2N5838;2N5839 and 2N5840** are epitaxial silicon n-p-n power transistors utilizing a multiple-emitter-site structure. These devices employ the popular ]EDEC TO-3 package; they differ mainly in voltage, currentgain, and VCE(sat) ratings. Featuring high breakdown voltage ra.
• Maximum safe-area-of-operation curves
• Low saturation voltages
• High voltage ratings VeER(s.s) = 375 V (2N5840) 300 V (2N5839) 275 V (2N5838)
• High dissipation rating
PT = 100W
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NOTE: CURRENT DERATING AT CONSTANT VOLTAGE APPLIES ONLY TO THE DISSIPATIONLIMITED PORTION AND THE IS/b-LIMITED PORTION OF MAXIMUM OPERATING AREA CURVES{FIG.Z631 00 NOT DERATE THE SPECIFIED VALUE FOR [C MAX.
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Fig. 1 - Derating curves for aI/ types.
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·With TO-3 package ·Low collector saturation voltage ·High breakdown voltage APPLICATIONS ·For use in switching power su.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2N5830 |
Fairchild Semiconductor |
NPN General Purpose Amplifier | |
2 | 2N5830 |
Micro Electronics |
NPN SILICON TRANSISTORS | |
3 | 2N5831 |
Micro Electronics |
NPN SILICON TRANSISTORS | |
4 | 2N5832 |
Micro Commercial Components |
NPN Transistor Plastic-case Bipolar | |
5 | 2N5832 |
SeCoS |
NPN Plastic Encapsulated Transistor | |
6 | 2N5835 |
ETC |
NPN SILICON HIGH-FREQUENCY TRANSISTORS | |
7 | 2N5835 |
Motorola |
High Frequency Transistors | |
8 | 2N5836 |
ETC |
NPN SILICON HIGH-FREQUENCY TRANSISTORS | |
9 | 2N5836 |
Motorola |
High Frequency Transistors | |
10 | 2N5837 |
ETC |
NPN SILICON HIGH-FREQUENCY TRANSISTORS | |
11 | 2N5837 |
Motorola |
High Frequency Transistors | |
12 | 2N5838 |
Motorola Inc |
HIGH-VOLTAGE/ HIGH-POWER SILICON N-P-N POWER TRANSISTORS |