·With TO-3 package ·High breakdown voltage APPLICATIONS ·Switching regulator ·Inverters ·Solenoid and relay drivers ·Motor controls PINNING PIN 1 2 3 Base Emitter Collector DESCRIPTION 2N5804 2N5805 Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta= ) SYMBOL VCBO PARAMETER 2N5804 Collector-base voltage 2N5805 2N5804 VCEO VEBO IC PD Tj.
R 2N5804 VCEO(SUS) Collector-emitter sustaining voltage 2N5805 VCEsat VBEsat ICEO Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current 2N5804 ICEV Collector cut-off current 2N5805 IEBO hFE fT Emitter cut-off current DC current gain Trainsistion frequency VEB=7V; IC=0 IC=5A ; VCE=4V IC=1A ; VCE=10V 20 15 VCE=RatedVCE; VBE(off)=1.5V 10 1.0 100 MHz mA IC=5A; IB=1A IC=5A ;IB=1A VCE=RatedVCE; IB=0 IC=0.1A ;IB=0 300 1.0 1.5 10 12 mA V V mA CONDITIONS MIN 225 V TYP. MAX UNIT SYMBOL 2 SavantIC Semiconductor www.DataSheet4U.com Product Specification Silico.
File 1'10. 407 _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ __ OO(]5LJD Solid State Division Power Transi.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2N5800 |
ETC |
SILICON P-CHANNEL JUNCTION FET | |
2 | 2N5804 |
RCA |
Power Transistors | |
3 | 2N5804 |
Seme LAB |
Bipolar NPN Device | |
4 | 2N5804 |
SavantIC |
(2N5804 / 2N5805) Silicon NPN Power Transistors | |
5 | 2N5810 |
Micro Electronics |
COMPLEMENTARY SILICON AF MEDIUM POWER TRANSISTOR | |
6 | 2N5811 |
Micro Electronics |
COMPLEMENTARY SILICON AF MEDIUM POWER TRANSISTOR | |
7 | 2N5812 |
Micro Electronics |
COMPLEMENTARY SILICON AF MEDIUM POWER TRANSISTOR | |
8 | 2N5812 |
Central Semiconductor Corp |
Small Signal Transistors | |
9 | 2N5813 |
Micro Electronics |
COMPLEMENTARY SILICON AF MEDIUM POWER TRANSISTOR | |
10 | 2N5814 |
Micro Electronics |
COMPLEMENTARY SILICON AF MEDIUM POWER TRANSISTOR | |
11 | 2N5814 |
Central Semiconductor |
COMPLEMENTARY SILICON TRANSISTOR | |
12 | 2N5815 |
Micro Electronics |
COMPLEMENTARY SILICON AF MEDIUM POWER TRANSISTOR |