TECHNICAL DATA NPN HIGH POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/488 Devices 2N5671 2N5672 Qualified Level JAN JANTX JANTXV MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current Collector Current Total Power Dissipation Symbol VCEO VCBO VEBO IB IC PT Top, Tstg Symbol RθJC www.DataSheet.net/ .
or-Emitter Breakdown Voltage IC = 200 mAdc Collector-Emitter Cutoff Current VCE = 80 Vdc Collector-Emitter Cutoff Current VCE = 110 Vdc, VBE = 1.5 Vdc VCE = 135 Vdc, VBE = 1.5 Vdc 2N5671 2N5672 2N5671 2N5672 2N5671 2N5672 V(BR)CEO 90 120 110 140 120 150 10 12 10 Vdc V(BR)CER Vdc V(BR)CEX ICEO Vdc mAdc mAdc 2N5671 2N5672 ICEX 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803 120101 Page 1 of 2 Datasheet pdf - http://www.DataSheet4U.co.kr/ 2N5671, 2N5672 JAN SERIES ELECTRICAL CHARACTERISTICS (con’t) Characteristics Symbol Min. Max. Unit OFF CH.
·With TO-3 package ·High current ,high speed APPLICATIONS ·Intended for high current and fast switching industrial appli.
2N5672 MECHANICAL DATA Dimensions in mm (inches) 4 .0 9 (0 .1 6 1 ) 3 .8 4 (0 .1 5 1 ) d ia . 2 p lc s . 3 9 .9 5 (1 .
SILICON HIGH POWER NPN TRANSISTOR 2N5672 • High Current Rating • Hermetic TO3 Metal Package. • Designed For High Speed .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2N5670 |
ETC |
SILICON N-CHANNEL JUNCTION FET | |
2 | 2N5670 |
New Jersey Semi-Conductor |
N-CHANNEL JFET | |
3 | 2N5670 |
Motorola |
VHF AMPLIFIER JFET | |
4 | 2N5670 |
Siliconix |
n-channel JFET | |
5 | 2N5671 |
Mospec Semiconductor |
POWER TRANSISTORS | |
6 | 2N5671 |
SavantIC |
Silicon NPN Power Transistors | |
7 | 2N5671 |
Microsemi |
NPN HIGH POWER SILICON TRANSISTOR | |
8 | 2N5671 |
Seme LAB |
Bipolar NPN Device | |
9 | 2N5675 |
Seme LAB |
Bipolar PNP Device | |
10 | 2N5676 |
Seme LAB |
Bipolar PNP Device | |
11 | 2N5676 |
SavantIC |
Silicon PNP Power Transistors | |
12 | 2N5677 |
SSDI |
PNP Transistor |