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matched dual n-channel JFETs designed for • • • H Siliccnix Performance Curves NCB See Section 4 • Wideband Differential Amplifiers • Commutators BENEFITS • High Gain 7500 ~mho Minimum 9fs • Specified Matching Characteristics *ABSOLUTE MAXIMUM RATINGS (25°C) Gate-Gate Voltage ........... ±80V Gate·Drain or Gate·Source Voltage ..............
121 NF =C 13 en Characteristic Gate-Reverse Current Gate-5ource Breakdown Voltage Gate-Source Cutoff Voltage Gate-Source Voltage Saturation Drain Current (Note 1) Static Dram Source ON Resistance Common-Source Forward Transconductance (Note 1) Common-Source Output Conductance Common-Source Reverse Transfer CapaCitance Common-Source Input Capacitance Spot NOise Figure Equivalent Short CircUit Input NOIse Voltage Min -40 -05 5 7500 7000 Characteristics 14 -M 15 TA -C H 16 I N G 1- 17 10SSl IOSS2 IVGS1-V GS2 1 ~IVGS1-VGS21 ~T 9f.l 9f.2 Saturation Drain Current Ratio (Note. 1 and 2) Differe.
2N5564 - National Semiconductor
The 2N/NPD5564 thru 2N/NPD5566 series of N-channel monolithic dual JFETs is designed for broadband low noise differenti.
2N5564 - Vishay Siliconix
The 2N5564/5565/5566 are matched pairs of JFETs mounted in a TO-71 package. This two-chip design reduces parasitics for .
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2N5560 |
SSDI |
NPN Transistor |
|
| 2 | 2N5565 |
Vishay Siliconix |
Matched N-Channel JFET |
|
| 3 | 2N5565 |
Siliconix |
dual n-channel JFET |
|
| 4 | 2N5565 |
National Semiconductor |
N-Channel Monolithic Dual JFET |
|
| 5 | 2N5566 |
Vishay Siliconix |
Matched N-Channel JFET |
|
| 6 | 2N5566 |
Siliconix |
dual n-channel JFET |
|
| 7 | 2N5566 |
National Semiconductor |
N-Channel Monolithic Dual JFET |
|
| 8 | 2N5567 |
Motorola Inc |
BIDIRECTIONAL TRIODE THYRISTORS |
|
| 9 | 2N5567 |
RCA |
Thyristors |
|
| 10 | 2N5568 |
Motorola Inc |
BIDIRECTIONAL TRIODE THYRISTORS |
|
| 11 | 2N5568 |
RCA |
Thyristors |
|
| 12 | 2N5569 |
Motorola Inc |
BIDIRECTIONAL TRIODE THYRISTORS |
|