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2NS471 (SILICON) thru 2NS476 P-CHANNEL JUNCTION FIELD-EFFECT TRANSISTORS Depletion mode Junction Field-Effect Transistors designed for general-purpose amplifier and switching applications. • High Gate·Source Breakdown Voltage V(BR)GSS = 40 Vdc (Min) for All Types • High DC Input Resistance IGSS = 100 pAdc (Max) @ VGS = 10 Vdc • Low Reverse Transfer Capacita.
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| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2N5472 |
ETC |
P-CHANNEL JUNCTION FIELD-EFFECT TRANSISTORS |
|
| 2 | 2N5473 |
ETC |
P-CHANNEL JUNCTION FIELD-EFFECT TRANSISTORS |
|
| 3 | 2N5474 |
ETC |
P-CHANNEL JUNCTION FIELD-EFFECT TRANSISTORS |
|
| 4 | 2N5475 |
ETC |
P-CHANNEL JUNCTION FIELD-EFFECT TRANSISTORS |
|
| 5 | 2N5476 |
ETC |
P-CHANNEL JUNCTION FIELD-EFFECT TRANSISTORS |
|
| 6 | 2N5400 |
ON Semiconductor |
Amplifier Transistor |
|
| 7 | 2N5400 |
Fairchild Semiconductor |
PNP General Purpose Amplifier |
|
| 8 | 2N5400 |
SeCoS |
PNP Plastic Encapsulated Transistor |
|
| 9 | 2N5400 |
CDIL |
PNP SILICON PLANAR EPITAXIAL TRANSISTOR |
|
| 10 | 2N5400 |
Motorola |
AMPLIFIER TRANSISTOR |
|
| 11 | 2N5400 |
Central Semiconductor |
SILICON PNP TRANSISTOR |
|
| 12 | 2N5400 |
Philips |
PNP high-voltage transistors |
|