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2N5358 (SILICON) thru 2N5364 Silicon N-channel junction field-effect transistors depletion mode (Type A) devices designed primarily for general-purpose amplifier applications. CASE 20 (TO-72) 102 3 4 STYLE 3 PIN 1. 2. 3. 4. DRAIN SOURCE GATE CASE LEAD MAXIMUM RATINGS Rating Forward Gate Current Reverse Gate-Source Voltage Drain-Gate Voltage Total Devic.
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2N5363 - National Semiconductor
The 2N5361 thru 2N5364 series of N-channel JFETs is characterized for general purpose audio and RF amplifiers requiring.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2N5360 |
National Semiconductor |
N-Channel JFETs |
|
| 2 | 2N5360 |
ETC |
Silicon N-channel junction field-effect transistors |
|
| 3 | 2N5361 |
National Semiconductor |
N-Channel JFETs |
|
| 4 | 2N5361 |
ETC |
Silicon N-channel junction field-effect transistors |
|
| 5 | 2N5362 |
National Semiconductor |
N-Channel JFETs |
|
| 6 | 2N5362 |
ETC |
Silicon N-channel junction field-effect transistors |
|
| 7 | 2N5364 |
National Semiconductor |
N-Channel JFETs |
|
| 8 | 2N5364 |
ETC |
Silicon N-channel junction field-effect transistors |
|
| 9 | 2N5365 |
GE Solid State |
(2N5365 / 2N5366) SILICON TRANSISTORS |
|
| 10 | 2N5366 |
Fairchild Semiconductor |
PNP General Purpose Amplifier |
|
| 11 | 2N5366 |
GE Solid State |
(2N5365 / 2N5366) SILICON TRANSISTORS |
|
| 12 | 2N5366 |
NTE |
Silicon PNP Transistor |
|