_ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ File No. 313 oornm Power Transistors Solid State Division 2N5262 Silicon N-P-N High-Speed Switching Transistor For Memory-Driver Service in Data-Processing Equipment and Other Critical Industrial Applications Features: "Modified TO-ag" • Fast switching at lA: ton = 30 ns max. toft.= 60 ns .
"Modified TO-ag"
• Fast switching at lA: ton = 30 ns max. toft.= 60 ns max.
• High voltage ~tings
• High..power.....ipation .
•atings
• High dc beta at lA - 25 min.
• Low saturation voltage at 1 A: 0.5 V typo
• Maximum
·area-af-operation curves for de and pulse operation
• Hermetic "low-profile T()'39" package
• Meets MI L-5-19500 specifications
RCA
·2N5262- is a silicon n-p
·n, epitaxial planar.tranSlstorwith characteristics which make it exceptiorljllly desirable for-Iighspeed, high-voltage, high-current switching applications. In addition, the 2N5262 features very short turn.oo and turn-of.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2N526 |
Motorola |
PNP Transistor | |
2 | 2N526 |
Central Semiconductor |
PNP Germanium Transistors | |
3 | 2N5264 |
SavantIC |
Silicon NPN Power Transistors | |
4 | 2N5265 |
Motorola |
GENERAL PURPOSE P-CHANNEL JFET | |
5 | 2N5265 |
ETC |
P-Channel junction depletion mode FET | |
6 | 2N5266 |
Motorola |
GENERAL PURPOSE P-CHANNEL JFET | |
7 | 2N5266 |
ETC |
P-Channel junction depletion mode FET | |
8 | 2N5267 |
Motorola |
GENERAL PURPOSE P-CHANNEL JFET | |
9 | 2N5267 |
ETC |
P-Channel junction depletion mode FET | |
10 | 2N5268 |
ETC |
P-Channel junction depletion mode FET | |
11 | 2N5268 |
Motorola |
GENERAL PURPOSE P-CHANNEL JFET | |
12 | 2N5269 |
ETC |
P-Channel junction depletion mode FET |