8/2014 2N5196, 2N5197, 2N5198, 2N5199 N-Channel Dual Silicon Junction Field-Effect Transistor ∙ Differencial Inputs At 25oC free air temperature Static Electrical Characteristics Gate Source Breakdown Voltage V(BR)GSS Gate Reverse Current Gate Source Cutoff Voltage Drain Saturation Current (pulsed) IGSS VGS(OFF) IDSS Dynamic Electrical Characteristics.
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The 2N5196/5197/5198/5199 JFET duals are designed for highĆperformance differential amplification for a wide range of pr.
The 2N5196thru 2N5199 series of N-channel monolithic dual JFETs is designed for low to medium frequency differential am.
The 2N5196/5197/5198/5199 JFET duals are designed for high-performance differential amplification for a wide range of pr.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2N5190 |
Central Semiconductor Corp |
NPN SILICON POWER TRANSISTOR | |
2 | 2N5190 |
ON Semiconductor |
Silicon NPN Power Transistors | |
3 | 2N5190 |
SavantIC |
(2N5190 - 2N5192) Silicon NPN Power Transistors | |
4 | 2N5190G |
ON Semiconductor |
Silicon NPN Power Transistors | |
5 | 2N5190R |
Central Semiconductor |
NPN SILICON POWER TRANSISTOR | |
6 | 2N5191 |
ON Semiconductor |
POWER TRANSISTORS | |
7 | 2N5191 |
STMicroelectronics |
NPN power transistors | |
8 | 2N5191 |
Central Semiconductor Corp |
NPN SILICON POWER TRANSISTOR | |
9 | 2N5191 |
SavantIC |
(2N5190 - 2N5192) Silicon NPN Power Transistors | |
10 | 2N5191G |
ON Semiconductor |
Silicon NPN Power Transistors | |
11 | 2N5191R |
Central Semiconductor |
NPN SILICON POWER TRANSISTOR | |
12 | 2N5192 |
STMicroelectronics |
NPN power transistors |