2N5060 THRU 2N5064 SILICON CONTROLLED RECTIFIERS 0.8 AMP, 30 THRU 200 VOLT w w w. c e n t r a l s e m i . c o m The CENTRAL SEMICONDUCTOR 2N5060 series devices are epoxy molded SCRs designed for control systems and sensing circuit applications. MARKING: FULL PART NUMBER TO-92 CASE MAXIMUM RATINGS: (TA=25°C unless otherwise noted) SYMBOL 2N5060 2N5061 2N5.
to +150 Thermal Resistance (Note 2) ΘJC 75 Thermal Resistance ΘJA 200 Notes: 1) 180° Conduction Angles 2) Measured with the “flat side down” on a heatsink and held in position by a metal clamp over the curved surface. W W A V °C °C °C/W °C/W ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN TYP MAX UNITS IDRM, IRRM VD=Rated VDRM, RGK=1.0kΩ 10 μA IDRM, IRRM VD=Rated VDRM, RGK=1.0kΩ, TC=110°C 50 μA IGT VD=7.0V, RL=100Ω 200 μA IGT VD=7.0V, RL=100Ω, TC=-40°C 350 μA IH Initiating Current, IT=20mA, RGK=1.0kΩ 5.0 mA IH Initiating Current,.
2N5060 Series Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors Annular PNPN devices designed.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2N5060 |
ON Semiconductor |
Sensitive Gate Silicon Controlled Rectifiers | |
2 | 2N5060 |
Motorola |
(2N5060 - 2N5064) Silicon Controlled Rectifiers | |
3 | 2N5060 |
Central Semiconductor |
SILICON CONTROLLED RECTIFIERS | |
4 | 2N5060 |
Digitron Semiconductors |
SILICON CONTROLLED RECTIFIERS | |
5 | 2N5061 |
ON Semiconductor |
Sensitive Gate Silicon Controlled Rectifiers | |
6 | 2N5061 |
Motorola |
(2N5060 - 2N5064) Silicon Controlled Rectifiers | |
7 | 2N5061 |
Central Semiconductor |
SILICON CONTROLLED RECTIFIERS | |
8 | 2N5061 |
Digitron Semiconductors |
SILICON CONTROLLED RECTIFIERS | |
9 | 2N5062 |
ON Semiconductor |
Sensitive Gate Silicon Controlled Rectifiers | |
10 | 2N5062 |
Motorola |
(2N5060 - 2N5064) Silicon Controlled Rectifiers | |
11 | 2N5062 |
Central Semiconductor |
SILICON CONTROLLED RECTIFIERS | |
12 | 2N5062 |
Digitron Semiconductors |
SILICON CONTROLLED RECTIFIERS |