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¡¤With TO-3 package ¡¤High speed ¡¤Low collector saturation voltage APPLICATIONS ¡¤They are especially intended for high current and fast switching applications PINNING PIN 1 2 3 Base Emitter Fig.1 simplified outline (TO-3) and symbol Collector DESCRIPTION Absolute maximum ratings(Ta=¡æ ) SYMBOL VCBO PARAMETER 2N5038 Collector-base voltage 2N5039 2N5038 VCE.
PN Power Transistors 2N5038 2N5039 CHARACTERISTICS Tj=25¡æ unless otherwise specified PARAMETER Collector-emitter sustaining voltage 2N5038 IC=0.2A ;IB=0 2N5039 2N5038 2N5039 IC=12A ;IB=1.2A 1.0 IC=10A ;IB=1A IC=20A ;IB=5A IC=20A ;IB=5A IC=12A ; VCE=5V 1.8 2N5039 2N5038 ICEO Collector cut-off current 2N5039 2N5038 ICEX Collector cut-off current 2N5039 2N5038 IEBO Emitter cut-off current 2N5039 hFE-1 DC current gain 2N5038 hFE-2 DC current gain 2N5039 Is/b Second breakdown collector current IC=10A ; VCE=5V VCE=28V, VCE=45V(t=1.0s Nonrepetitive) 5 0.9 A IC=2A ; VCE=5V IC=12A ; VCE=5V 20 100 50.
2N5039 - Central Semiconductor
The CENTRAL SEMICONDUCTOR 2N5038 and 2N5039 are silicon NPN power transistors designed for power amplifier and power os.
2N5039 - NTE
The 2N5038 and 2N5039 are silicon NPN transistors in a TO−3 type package that have fast switching speeds and high curre.
2N5039 - Microsemi
TECHNICAL DATA NPN HIGH POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/439 Devices 2N5038 2N5039 Qualified Level J.
2N5039 - Toshiba
: SILICON NPN TRIPLE DIFFUSED TYPE 3 | 2N5039 DC-DC CONVERTER, SWITCHING REGULATOR AND HIGH POWER AMPLIFIER APPLICATIO.
2N5039 - ON Semiconductor
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by 2N5038/D NPN Silicon Transistors . . . fast switching sp.
2N5039 - VPT
2N5038 & 2N5039 NPN High Power Silicon Transistor Features • Available in JAN, JANTX, JANTXV per MIL-PRF-19500/439 • TO-.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2N5031 |
Microsemi Corporation |
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS |
|
| 2 | 2N5031 |
Motorola |
HIGH FREQUENCY TRANSISTOR |
|
| 3 | 2N5031 |
Advanced Power Technology |
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS |
|
| 4 | 2N5032 |
Motorola |
HIGH FREQUENCY TRANSISTOR |
|
| 5 | 2N5032 |
ETC |
NPN SILICON RF SMALL SIGNAL TRANSISTORS |
|
| 6 | 2N5032 |
New Jersey Semi-Conductor |
Bipolar NPN UHF/Microwave Transistor |
|
| 7 | 2N5034 |
RCA |
Power Transistors |
|
| 8 | 2N5035 |
RCA |
Power Transistors |
|
| 9 | 2N5036 |
RCA |
Power Transistors |
|
| 10 | 2N5037 |
RCA |
Power Transistors |
|
| 11 | 2N5038 |
ON Semiconductor |
NPN Silicon Transistors |
|
| 12 | 2N5038 |
STMicroelectronics |
HIGH CURRENT NPN SILICON TRANSISTOR |
|
