2N5014 - Seme LAB

2N5014 SILICON EPITAXIAL NPN TRANSISTOR

2N5014 MECHANICAL DATA Dimensions in mm (inches) 8 .8 9 (0 .3 5 ) 9 .4 0 (0 .3 7 ) SILICON EPITAXIAL NPN TRANSISTOR 7 .7 5 (0 .3 0 5 ) 8 .5 1 (0 .3 3 5 ) 6 .1 0 (0 .2 4 0 ) 6 .6 0 (0 .2 6 0 ) 1 2 .7 0 (0 .5 0 0 ) m in . 0 .8 9 m a x . (0 .0 3 5 ) 7 .7 5 (0 .3 0 5 ) 8 .5 1 (0 .3 3 5 ) d ia . FEATURES General purpose power transistor for switching and l.

Features

General purpose power transistor for switching and linear applications in a hermetic TO
  –39 package. 2 .5 4 (0 .1 0 0 ) 5 .0 8 (0 .2 0 0 ) ty p . 1 0 .6 6 (0 .0 2 6 ) 1 .1 4 (0 .0 4 5 ) 0 .7 1 (0 .0 2 8 ) 0 .8 6 (0 .0 3 4 ) 2 3 4 5 ° TO
  –39 PACKAGE PIN 1
  – Emitter PIN 2
  – Base PIN 3
  – Collector ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated) VCBO VCER VEBO IC PTOT TJ TSTG Collector
  – Base Voltage Collector
  – Emitter Voltage Emitter
  – Base Reverse Voltage Continuous Collector Current Total Device Dissipation and Storage Temperature Range TC = 25°C Maximum Operating Junction Tem.