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2N4920 - Motorola

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2N4920 MEDIUM-POWER PLASTIC PNP SILICON TRANSISTORS

2N4918 thru 2N4920 (SILICON) MJE4918 thruMJE4920 MEDIUM-POWER PLASTIC PNP SILICON TRANSISTORS · .. designed for driver circuits, switching, and amplifier applications. These high-performance plastic devices feature: = = • Low Saturation Voltage - VCE(sat) 0.6 Vdc (Max) @ IC 1.0 Amp • Excellent Power Dissipation Due to Thermopad Construction- = PD = 30 and .

Features

& Storage Junction '. Temperature"Range" TJ' Tstg THERMAL CHARACTERISTICS 2) 2N4918 saries MJE4918 series 30 40 0.24 0.32 _ -65to+150 - Watts WloC °c Therinai Resistance, Junctioh to 'CaSe
• Indicates JEOeC Registerec:i Data for 2N4918 Series (1) The 1.0 Amp maximum Ie value is based upon JE oec current gain requirements. The 3.0 Amp maximum value is based upon actual current-handling capability of the device (See Figure 5), (2) Recommend use of thermal compound for lowest thermal resistance. FIGURE 1 - POWER DERATING 40 " "r-.... ~ 30 zo ""'" i~li 20 k I'-.. MJE4918th.

The same part from a different manufacturer

Datasheet 2N4920 - ON Semiconductor 2N4920

2N4918 - 2N4920 Series Medium-Power Plastic PNP Silicon Transistors These medium−power, high−performance plastic device.

Datasheet 2N4920 - Central Semiconductor 2N4920

145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 • Fax: (631) 435-1824 OUTSTANDING SUPPORT AND SUPERIOR SE.

Datasheet 2N4920 - Multicomp 2N4920

Medium Power Plastic PNP, TO-126, Silicon Transistor. Designed for driver circuits, switching, and amplifier applicatio.

Datasheet 2N4920 - SavantIC 2N4920

·With TO-126 package ·Complement to type 2N4921/4922/4923 ·Excellent safe operating area ·Low collector saturation volta.

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