VCBO (V) VCEO (V) *VCER VEBO (V) ICBO @ (µA) *ICEO **ICES ***ICEV ****ICER MIN 5.0 5.0 5.0 5.0 7.0 7.0 6.0 6.0 7.0 7.0 7.0 6.0 6.0 6.0 6.0 6.0 6.0 6.0 7.0 6.0 5.0 5.0 5.0 5.0 3.5 6.0 --5.0 5.0 6.0 6.0 6.0 5.0 5.0 7.0 7.0 4.0 4.0 0.50 0.50 0.50 0.50 0.20 0.25 1.70 1.70 100 100 100 100 100 100 1.00 0.50 0.10 10 0.25 0.20 0.025 0.025 0.025 0.025 20* 0.10 0.50 0.
0 0.5 50 50 4,000 150 2,000 2,000 2,000 150 150 30 30 10 10 5.0 5.0 5.0 5.0 10 10 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 10 10 10 2.0 10 10 10 1.0 1.0 1.0 5.0 5.0 10 10 2.0 10 2.0 2.0 2.0 10 10 10 10 10 10 MAX 0.50 0.50 0.50 0.50 0.65 1.40 0.75 0.95 0.60 0.60 0.60 0.60 0.60 0.60 1.00 0.80 0.20 0.30 1.40 0.50 0.50 0.50 0.70 0.70 0.50 0.20 --1.00 1.40 1.00 1.00 1.00 0.25 0.25 1.00 1.00 0.50 0.50 500 500 500 500 150 150 1,000 1,000 1,000 1,000 1,000 1,000 1,000 1,000 10 200 2,000 1.0 150 10 500 500 1,000 1,000 100 0.5 --4,000 150 5,000 5,000 5,000 10 10 10 10 10 10 VCB (V) hFE @ IC @ VCE VCE (SAT) @ IC .
2N4895 Dimensions in mm (inches). 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) Bipolar NPN Device in a Hermetica.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2N489 |
Digitron |
SILICON UNIJUNCTION TRANSISTORS | |
2 | 2N4890 |
Central Semiconductor Corp |
Small Signal Transistors | |
3 | 2N4890 |
Motorola |
GENERAL PURPOSE TRANSISTOR | |
4 | 2N4896 |
Seme LAB |
Bipolar NPN Device | |
5 | 2N4896 |
Central Semiconductor Corp |
Small Signal Transistors | |
6 | 2N4897 |
Seme LAB |
Bipolar NPN Device | |
7 | 2N4897 |
Central Semiconductor Corp |
Small Signal Transistors | |
8 | 2N4898 |
Inchange Semiconductor |
Silicon PNP Power Transistors | |
9 | 2N4898 |
Mospec Semiconductor |
POWER TRANSISTORS | |
10 | 2N4898 |
Motorola |
Medium-power PNP silicon transistors | |
11 | 2N4898X |
Seme LAB |
PNP EPITAXIAL BASE MEDIUM POWER TRANSISTOR | |
12 | 2N4899 |
Inchange Semiconductor |
Silicon PNP Power Transistors |