The -30V InterFET 2N4302, 2N4303, and 2N4304 are targeted for small signal amplifiers, mixers and oscillators. Gate leakages are typically less than 10pA at room temperatures. Source 1 Drain 2 SOT23 Top View 3 Gate Gate 3 Drain 2 Source 1 TO-92 Bottom View Product Summary Parameters BVGSS Gate to Source Breakdown Voltage IDSS Drain to Source Saturation .
• InterFET N0026S Geometry
• Low Noise: 4 nV/√Hz Typical
• Low Leakage: 10pA Typical
• RoHS Compliant
• SMT, TH, and Bare Die Package options.
Applications
• VHS Amplifiers
• Small Signal Amplifiers
• Oscillators
• Mixers
Description
The -30V InterFET 2N4302, 2N4303, and 2N4304 are targeted for small signal amplifiers, mixers and oscillators. Gate leakages are typically less than 10pA at room temperatures.
Source 1 Drain 2
SOT23 Top View 3 Gate
Gate 3 Drain 2 Source 1
TO-92 Bottom View
Product Summary
Parameters BVGSS Gate to Source Breakdown Voltage IDSS Drain to Source Saturation Curren.
n-channel JFETs designed for • • • • General Purpose Amplifiers H Performance Curves NP See Section 4 BENEFITS • Low Co.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2N4300 |
Central Semiconductor Corp |
Small Signal Transistors | |
2 | 2N4300 |
Seme LAB |
Bipolar NPN Device | |
3 | 2N4300 |
NES |
NPN Power Transistor | |
4 | 2N4300 |
SSDI |
HIGH SPEED NPN TRANSISTOR | |
5 | 2N4301 |
SSDI |
NPN Transistor | |
6 | 2N4302 |
Siliconix |
n-channel JFET | |
7 | 2N4302 |
InterFET |
N-Channel JFET | |
8 | 2N4304 |
Siliconix |
n-channel JFET | |
9 | 2N4304 |
InterFET |
N-Channel JFET | |
10 | 2N4311 |
Seme LAB |
Bipolar NPN Device | |
11 | 2N4314 |
RCA |
Power Transistors | |
12 | 2N4338 |
Calogic LLC |
N-Channel JFET |