2N4151 (SILICON) thru 2N4198 THYRISTORS · .. multi·purpose PNPN silicon controlled rectifiers suited for indus· trial, consumer, and mulitary applications. Offered in a choice of space·saving, economical packages for mounting versatility. • Uniform Low·Level Noise·lmmune Gate Triggering IGT ~ 10 mA (Typ) @ TC ~ 250 C • Low Forward "On" Voltage I"f ~ 1.0 V .
(One cycle, 60 Hz, T J =-40 to +1 OOoCI
ITSM
100
Amp
Circuit Fusing Considerations
(TJ =-40 to +100o C; t~8.3 msl
12t
40
A2s
*Peak Gate Power
PGM
5.0
Watt
* Average Gate Power
*Peak Gate Current
Peak Gate Voltage (21
·Operating Temperature Range
*Storage Temperature Range
PG(AVI IGM VGM TJ T stg
0.5 2.0 10 -40 to +100 -40 to +150
Watt Amp Volts °c °c
Stud Torque
2N4167
·2N4182
15
in. lb.
THERMAL CHARACTERISTICS
Characteristic
Symbol Typ Max
Unit
Thermal Resistance, Junction to Case
R8JC
1.5 2.5'
°CIW
Thermal Resistance, Case to Ambient
R8CA
(See Fig. 111 2N4151
·66.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2N4190 |
Motorola Inc |
SILICON CONTROLLED RECTIFIERS | |
2 | 2N4191 |
Motorola |
THYRISTORS | |
3 | 2N4192 |
Motorola |
THYRISTORS | |
4 | 2N4193 |
Motorola |
THYRISTORS | |
5 | 2N4194 |
Motorola |
THYRISTORS | |
6 | 2N4196 |
Motorola |
THYRISTORS | |
7 | 2N4197 |
Motorola |
THYRISTORS | |
8 | 2N4198 |
Motorola |
THYRISTORS | |
9 | 2N4199 |
Motorola Inc |
SILICON CONTROLLED RECTIFIERS | |
10 | 2N4199 |
Digitron Semiconductors |
SILICON CONTROLLED RECTIFIERS | |
11 | 2N4100 |
Solid State |
Dual NPN Amplifier | |
12 | 2N4100 |
New Jersey Semi-Conductor |
Dual NPN Transistor |