N-Channel JFET General Purpose Amplifier CORPORATION 2N4117 – 2N4119 / 2N4117A – 2N4119A PN4117 – PN4119 / PN4117A – PN4119A / SST4117 – SST4119 PIN CONFIGURATION FEATURES Leakage • Low • Low Capacitance TO - 92 TO-72 ABSOLUTE MAXIMUM RATINGS (TA = 25oC unless otherwise noted) Gate-Source or Gate-Drain Voltage . . . . . . . -40V Gate Cur.
Leakage
• Low
• Low Capacitance
TO - 92
TO-72
ABSOLUTE MAXIMUM RATINGS (TA = 25oC unless otherwise noted) Gate-Source or Gate-Drain Voltage . . . . . . . . . . . . . . . . -40V Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA Storage Temperature Range . . . . . . . . . . . . . -65oC to +200oC Operating Temperature Range . . . . . . . . . . . -55oC to +175oC Lead Temperature (Soldering, 10sec) . . . . . . . . . . . . . +300oC Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300mW Derate above 25oC . . . . . . . . . . . . . . . . . . .
The -50V InterFET 2N4117/A, 2N4118/A, and 2N4119/A JFET’s are targeted for ultra high input impedance applications. Gat.
2N4117.A 2N4118.A 2N4119.A MAXIMUM RATINGS Rating Drain-Source Voltage Drain-Gate Voltage Gate Current Total Device Dis.
The -50V 2N4117/A, 2N4118/A, and 2N4119/A JFET’s are targeted for ultra high input impedance applications for mid to hig.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2N4111 |
INCHANGE |
NPN Transistor | |
2 | 2N4111 |
Seme LAB |
Bipolar NPN Device | |
3 | 2N4112 |
Seme LAB |
Bipolar NPN Device | |
4 | 2N4112 |
INCHANGE |
NPN Transistor | |
5 | 2N4113 |
INCHANGE |
NPN Transistor | |
6 | 2N4113 |
Seme LAB |
Bipolar NPN Device | |
7 | 2N4114 |
Seme LAB |
Bipolar NPN Device | |
8 | 2N4114 |
INCHANGE |
NPN Transistor | |
9 | 2N4117A |
Calogic LLC |
N-Channel JFET General Purpose Amplifier | |
10 | 2N4117A |
Vishay Siliconix |
N-Channel JFETs | |
11 | 2N4117A |
Micross |
High Impedence | |
12 | 2N4117A |
InterFET |
N-Channel JFET |