The -30V InterFET 2N3969 is targeted for sensitive amplifier stages with gate leakages typically less than 10pA at room temperatures. The TO-72 package is hermetically sealed and suitable for military applications. Gate Drain 2 Source TO-72 Bottom View 3 4 Case 1 Source 1 Drain 2 SOT23 Top View 3 Gate Product Summary Parameters BVGSS IDSS Gate to Sou.
• InterFET N0016H Geometry
• Low Noise: 5 nV/√Hz Typical
• Low Input Capacitance: 3.5pF Typical
• RoHS Compliant
• SMT, TH, and Bare Die Package options.
Applications
• Audio Amplifiers
• Small Signal Amplifier
• High Impedance Pre-Amplifier
Description
The -30V InterFET 2N3969 is targeted for sensitive amplifier stages with gate leakages typically less than 10pA at room temperatures. The TO-72 package is hermetically sealed and suitable for military applications.
Gate Drain 2 Source
TO-72 Bottom View
3 4 Case
1
Source 1 Drain 2
SOT23 Top View 3 Gate
Product Summary
Parameters
BVGSS IDS.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2N3960 |
Semicoa Semiconductor |
NPN Transistor | |
2 | 2N3960 |
Motorola |
HIGH FREQUENCY TRANSISTOR | |
3 | 2N3960 |
Microsemi |
NPN SILICON SWITCHING TRANSISTOR | |
4 | 2N3960UB |
Microsemi |
NPN SILICON SWITCHING TRANSISTOR | |
5 | 2N3961 |
Motorola |
NPN silicon RF Power transistors | |
6 | 2N3962 |
Micro Electronics |
PNP SILICON TRANSISTOR | |
7 | 2N3962 |
Motorola |
AMPLIFIER TRANSISTOR | |
8 | 2N3962 |
Solid State |
PNP Silicon Transistor | |
9 | 2N3962 |
Seme LAB |
Bipolar PNP Device | |
10 | 2N3963 |
Semelab Plc |
Bipolar PNP Device | |
11 | 2N3963 |
Central Semiconductor |
SILICON PNP TRANSISTORS | |
12 | 2N3963 |
Motorola |
AMPLIFIER TRANSISTOR |