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n-chalrlnel JFET designed· for • • • • Analog !iwitches • Choppers • Commutc:ifors H Performance Curves NH See Section 4 BENEFITS • Low Insertion Loss, No Offset Voltage ROS(on) < 220 n • Short Switching Aperture Times Crss < 1.5 pF t(on) + t(off) < 50 ns Typical *ABSOLUTE MAXIMUM RATINGS (25°C) Gate·Drain or Gate·Source Voltage . -30 V Gate.
ate:Source Cutoff Voltage Gate-Source Breakdown Voltage Saturation Drain Current (Note 1)
Drain Cutoff Current
Static Drain-Source ON Resistance Drain-Source ON Voltage
Drain Reverse Current
Drain-Source ON Resistance Common-Source Input Capacitance Common-Source Reverse Transfer Capacitance
Min Typ Ma. Unit
-0.1
nA
-4
-6.0
V
-30
2.0
, mA
1.0 nA
2.0
~A
220
n
0.25
V
0.1 nA
0.2
~A
220
n
3.1
6.0
pF
0.8
1.5
Test Conditions VGS - -20 V. VOS' 0 VOS-l0V,lo'10nA IG'-l~A,VOS'O VOS' 20V, VGS' 0
VOS '10V, VGS' -7 V
VOS'';O.lV,VGS
·O 10' 1 mA, VGS' 0
I TA' 150
·C
VOG' 20 V,IS' .
2N3966 - Motorola
2N3966 CASE 20-03, STYLE 1 TO-72 (TO-206AF) JFET HIGH-FREQUENCY AMPLIFIER —N-CHANNEL DEPLETION MAXIMUM RATINGS Rating .
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2N3960 |
Semicoa Semiconductor |
NPN Transistor |
|
| 2 | 2N3960 |
Motorola |
HIGH FREQUENCY TRANSISTOR |
|
| 3 | 2N3960 |
Microsemi |
NPN SILICON SWITCHING TRANSISTOR |
|
| 4 | 2N3960UB |
Microsemi |
NPN SILICON SWITCHING TRANSISTOR |
|
| 5 | 2N3961 |
Motorola |
NPN silicon RF Power transistors |
|
| 6 | 2N3962 |
Micro Electronics |
PNP SILICON TRANSISTOR |
|
| 7 | 2N3962 |
Motorola |
AMPLIFIER TRANSISTOR |
|
| 8 | 2N3962 |
Solid State |
PNP Silicon Transistor |
|
| 9 | 2N3962 |
Seme LAB |
Bipolar PNP Device |
|
| 10 | 2N3963 |
Semelab Plc |
Bipolar PNP Device |
|
| 11 | 2N3963 |
Central Semiconductor |
SILICON PNP TRANSISTORS |
|
| 12 | 2N3963 |
Motorola |
AMPLIFIER TRANSISTOR |
|