monolithic dual n-channel JFETs designed for • • • • Low and Medium Frequency Differential Amplifiers • High Input Impedance Amplifiers ABSOLUTE MAXIMUM RATINGS (25°C) Any Case-To-Lead Voltage...•.....•• " .•...•.. ±100 V Gate-Drain or Gate-Source Voltage •••••..•...••.• -50 V Gate Current. . . • . • . • . . • • . • • • • • • • • • . • . . . . . .• 50 mA Tot.
0, '1
*ELECTRICAL CHARACTERISTICS (25°C unless otherwise noted)
CharacterIStic
1 12-'
IGSS
3 BVGSS
1-
4 I-
5 IS
s T A T I
VGS(olll VGS(II
17" C VGS
IS
l"i IG
1-
10 lOSS
1-+1- gls
IE. 13
0
y
gas
1- N
14 A CISS
I-M
15 I Crss
-c
-16 Cdgo
17 NF
Gate Reverse Current
Gate
·Source Breakdown Voltage Gate-Source Cutoff Voltage Gate-Source Forward Voltage
Gate-Source Voltage
Gate Operating Current
Saturation Dram Current Common-Source Forward Transconductance Common-Source Output Conductance Common-Source Input Capacitance Common-Source Reverse Transfer Capacitance
Drain-Gate Ca.
The 2N3954 thru 2N3955/A series of N-channel monolithic dual JFETs is designed for low to medium frequency differential .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2N3955 |
ETC |
N-Channel Dual Silicon Junction Field-Effect Transistor | |
2 | 2N3955 |
National Semiconductor |
N-Channel Monolithic Dual JFETs | |
3 | 2N3955 |
Micross |
MONOLITHIC DUAL N-CHANNEL JFET | |
4 | 2N3955 |
Siliconix |
monolithic dual n-channel JFET | |
5 | 2N3950 |
Motorola |
NPN silicon RF power transistor | |
6 | 2N3954 |
National Semiconductor |
N-Channel Monolithic Dual JFETs | |
7 | 2N3954 |
Micross |
MONOLITHIC DUAL N-CHANNEL JFET | |
8 | 2N3954 |
Siliconix |
monolithic dual n-channel JFET | |
9 | 2N3954A |
National Semiconductor |
N-Channel Monolithic Dual JFETs | |
10 | 2N3954A |
Micross |
MONOLITHIC DUAL N-CHANNEL JFET | |
11 | 2N3954A |
Siliconix |
monolithic dual n-channel JFET | |
12 | 2N3956 |
National Semiconductor |
N-Channel Monolithic Dual JFETs |