2N3926 - Motorola

2N3926 NPN silicon annular RF power transistors

2N3924 (SILICON) thru 2N3927 NPN silicon annular RF power transistors, optimized for large-signal power-amplifier and driver applications to 300 MHz. CASE 24 2N3925 (TO· 102) Collector electrically connected to case; stud electrically isolated from case CASE 36 2N3926 2N3927 (TO·60) Stud and case electrically connected to emitter CASE 79 2N3924 (TQ.39) C.

Features

tions I I I I I Symbol Min Typ Max Unit IIff CIIWCltllSTlCS CoUector-Emltter Sustaining Voltage f 11 CoUector-B..e Breakdown Voltage Emltter-Ba
•
• Breakdown Voltage CoUector Cutoff Current 'C = 200 mAde 'C = 0.25 mAde, ~. 0 'C .0.50 mAde, ~ =0 ~ = 1.0 mAde, 'C =0 'E = 2. 0 mAde, 'C = 0 VCB
• 15 Vde, ~
• 0 BVCEO(sus)' 18 2N3924 thru 2N3926 BVCBO 36 2N3927 38 2N3924 thru 2N3926 BVEBO 4.0 2N3827 4.0 2N3924 thru 2N3928 2N3927 'CBO - - - Vdc - - Vdc -- - - Vde -- 0.1 mAde 0.25 VCB = 15 Vdc, 'E
• 0, TA
• 150'~N3924 thru 2N3928 2N3027 -- - 5.0 - 10 DYIIAIIC CIlWCltIlSTICS Current-G.