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2N3716X MECHANICAL DATA Dimensions in mm (inches) 40.01 (1.575) Max. 22.23 (0.875) Max. 1.09 (0.043) 0.97 (0.038) Dia. 30.40 (1.197) 29.90 (1.177) 2 11.18 (0.440) 10.67 (0.420) 1 26.67 (1.050) Max. 4.47 (0.176) Rad. 2 Pls. 11.43 (0.450) 6.35 (0.250) 12.19 (0.48) 1.63 (0.064) 11.18 (0.44) 1.52 (0.060) 4.09 (0.161) 3.84 (0.151) 2 Pls NPN SILICON EPIBASE TR.
• SILICON EPIBASE NPN TRANSISTOR
• CECC SCREENING OPTIONS
• LOW FREQUENCY
PIN 1
– Base
16.97 (0.668) 16.87 (0.664)
TO3 Underside View
PIN 2
– Emitter Case
– Collector
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
VCBO
Collector
– Base Voltage
100V
VCEO
Collector
– Emitter Voltage (IB = 0)
80V
VEBO
Emitter
– Base Voltage (IB = 0)
7.V
IC
Collector Current
10A
IB
Base Current
4A
Ptot
Maximum Total Power Dissipation @ TC = 25°C
150W
Derate above 25°C
6.86mW / °C
TJ , TSTG RθJCase
Operating and Storage Junction Temperature Range Thermal Resistance Junction.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2N3716 |
Motorola Inc |
10 AMPERE POWER TRANSISTORS |
|
| 2 | 2N3716 |
Seme LAB |
Bipolar NPN Device |
|
| 3 | 2N3716 |
Toshiba |
GENERAL PURPOSE POWER TRANSISTOR |
|
| 4 | 2N3716 |
Central Semiconductor |
SILICON NPN TRANSISTORS |
|
| 5 | 2N3716 |
Comset Semiconductor |
(2N3713 - 2N3716) EPITAXIAL-BASE TRANSISTORS |
|
| 6 | 2N3716 |
MA-COM |
NPN High Power Silicon Transistor |
|
| 7 | 2N3710 |
Micro Electronics |
NPN/PNP SILICON AF SMALL SIGNAL TRANSISTORS |
|
| 8 | 2N3711 |
Micro Electronics |
NPN/PNP SILICON AF SMALL SIGNAL TRANSISTORS |
|
| 9 | 2N3712 |
Motorola |
NPN Transistor |
|
| 10 | 2N3713 |
Inchange Semiconductor |
Silicon NPN Power Transistor |
|
| 11 | 2N3713 |
Toshiba |
GENERAL PURPOSE POWER TRANSISTOR |
|
| 12 | 2N3713 |
Central Semiconductor |
SILICON NPN TRANSISTORS |
|