Recherchez avec le numéro de pièce ainsi que le fabricant ou la description
depletion-type n-charlnel MOSFET designed for • • • • Small-Signal Amplifiers • Ultra-Higlh Input Impedance Amplifiers Electrometers Smoke detedors pH Meters H Performance Curves MA See Section 4 BENEFITS • Insignificant Loading in High Impedance Circuits RIN> 1015 .11 • High Off-Isolation as a Switch ID(off) < 100 pA *ABSOLUTE MAXIMUM RATINGS (25°C) Drain.
Cutoff Voltage Gate-Soun:e Voltage Saturation Drain Current Drain Cutoff Current Common-Source Parallel Input Resistance
7
-Ii 9D
-Y
10 N
-A M
-11 I C
-12
13
rds(on) 90S 'fs lYfsl Ciss Crss
Drain-Soutee ON Resistance (Note 3)
Common-Source Output Conductance
Common-Source Forward TranscondL ctance
Common-Source Forward Transadmittance
Common-Source Input Capacitance (OutlJut Shorted)
Common-Source Reverse Transfer Capacitanc€
20 -0.7
2 1015
1,400 1,400
-3.5
10 16 300 100
2,000
6.8
-6.0 -5.5
10 100
550
120 2,BOO
7.5 1.6
V mA pA 11
J.lmho
pF
* JEDEC registered data NOTES,
1. Permanent da.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2N3630 |
SSDI |
NPN Transistor |
|
| 2 | 2N3632 |
Microsemi Corporation |
RF & MICROWAVE TRANSISTORS |
|
| 3 | 2N3632 |
Motorola |
NPN silicon RF Power transistors |
|
| 4 | 2N3632 |
New Jersey Semi-Conductor |
RF & MICROWAVE TRANSISTORS |
|
| 5 | 2N3634 |
Microsemi Corporation |
PNP SILICON AMPLIFIER TRANSISTOR |
|
| 6 | 2N3634 |
SEMICOA |
PNP Transistor |
|
| 7 | 2N3634 |
TT |
SILICON PNP TRANSISTOR |
|
| 8 | 2N3634 |
Motorola |
HIGH VOLTAGE TRANSISTOR |
|
| 9 | 2N3634 |
Central Semiconductor |
SILICON PNP TRANSISTORS |
|
| 10 | 2N3634 |
ON Semiconductor |
Low Power Transistors |
|
| 11 | 2N3634CSM |
Seme LAB |
PNP SILICON TRANSISTOR |
|
| 12 | 2N3634L |
Microsemi Corporation |
PNP SILICON AMPLIFIER TRANSISTOR |
|