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The CENTRAL SEMICONDUCTOR 2N3583 series devices are silicon NPN transistors designed for high speed switching and high voltage amplifier applications. MARKING: FULL PART NUMBER TO-66 CASE MAXIMUM RATINGS: (TC=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Collector Current Continuous Base Curr.
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2N3584 - SavantIC
·With TO-66 package ·Continuous collector current-IC=2A ·Power dissipation -PD=35W @TC=25 ·VCE(SAT)=0.75V(Max)@IC=1A;IB.
2N3584 - NTE
The 2N3583, 2N3584, and 2N3585 are silicon transistors in a TO66 type package designed for high− speed switching and li.
2N3584 - Microsemi Corporation
These power transistors are produced by PPC's DOUBLE DIFFUSED PLANAR process. This technology produces high voltage dev.
2N3584 - Comset Semiconductor
NPN 2N3583 – 2N3584 – 2N3585 NPN SILICON POWER TRANSISTORS. The 2N3583 2N3584 2N3585 are mounted in Jedec TO-66 metal c.
2N3584 - Seme LAB
2N3584 Dimensions in mm (inches). 3.68 (0.145) rad. max. 3.61 (0.142) 4.08(0.161) rad. 12 6.35 (0.250) 8.64 (0.340).
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2N3583 |
NTE |
Silicon NPN Transistors |
|
| 2 | 2N3583 |
Microsemi Corporation |
5 Amp/ 250V/ High Voltage NPN Silicon Power Transistors |
|
| 3 | 2N3583 |
Central Semiconductor |
SILICON NPN TRANSISTORS |
|
| 4 | 2N3583 |
Comset Semiconductor |
NPN SILICON POWER TRANSISTORS |
|
| 5 | 2N3583 |
Seme LAB |
Bipolar NPN Device |
|
| 6 | 2N3583 |
Inchange Semiconductor |
Silicon NPN Power Transistor |
|
| 7 | 2N3585 |
Microsemi Corporation |
5 Amp/ 500V/ High Voltage NPN Silicon Power Transistors |
|
| 8 | 2N3585 |
Mospec Semiconductor |
POWER TRANSISTORS |
|
| 9 | 2N3585 |
Central Semiconductor |
SILICON NPN TRANSISTORS |
|
| 10 | 2N3585 |
SavantIC |
Silicon NPN Power Transistors |
|
| 11 | 2N3585 |
Comset Semiconductor |
NPN SILICON POWER TRANSISTORS |
|
| 12 | 2N3585 |
NTE |
Silicon NPN Transistors |
|