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2N3460 - InterFET

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2N3460 N-Channel JFET

The -50V InterFET 2N3458, 2N3459, and 2N3460 are targeted for sensitive amplifier stages for midfrequencies designs. Gate leakages are typically less than 10pA at room temperatures. The 2N3460 has a cutoff voltage of less than 1.8V ideal for low-level power supplies. The TO-18 package is hermetically sealed and suitable for military applications. Gate/Case .

Features


• InterFET N0016H Geometry
• InterFET N0032H Geometry (2N3458)
• Low Noise: 5 nV/√Hz Typical
• High Gain: 7.5mS Typical (2N3458)
• Low Cutoff Voltage: 2N3460 < 1.8V
• RoHS Compliant
• SMT, TH, and Bare Die Package options. Applications
• General Purpose Amplifiers Description The -50V InterFET 2N3458, 2N3459, and 2N3460 are targeted for sensitive amplifier stages for midfrequencies designs. Gate leakages are typically less than 10pA at room temperatures. The 2N3460 has a cutoff voltage of less than 1.8V ideal for low-level power supplies. The TO-18 package is hermetically sealed and suitable f.

The same part from a different manufacturer

Datasheet 2N3460 - Central Semiconductor 2N3460

145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 • Fax: (631) 435-1824 .

Datasheet 2N3460 - Motorola 2N3460

MAXIMUM RATINGS Rating Drain-Gate Voltage Gate-Source Voltage Gate Current @Total Device Dissipation T/^ = 25°C Derate a.

Datasheet 2N3460 - Siliconix 2N3460

n-channel JFETs designed for • • • • Small-Signal Low Noise Amplifiers H Performance Curves NP See Section 4 BENEFITS •.

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