The -50V InterFET 2N3458, 2N3459, and 2N3460 are targeted for sensitive amplifier stages for midfrequencies designs. Gate leakages are typically less than 10pA at room temperatures. The 2N3460 has a cutoff voltage of less than 1.8V ideal for low-level power supplies. The TO-18 package is hermetically sealed and suitable for military applications. Gate/Case .
• InterFET N0016H Geometry
• InterFET N0032H Geometry (2N3458)
• Low Noise: 5 nV/√Hz Typical
• High Gain: 7.5mS Typical (2N3458)
• Low Cutoff Voltage: 2N3460 < 1.8V
• RoHS Compliant
• SMT, TH, and Bare Die Package options.
Applications
• General Purpose Amplifiers
Description
The -50V InterFET 2N3458, 2N3459, and 2N3460 are targeted for sensitive amplifier stages for midfrequencies designs. Gate leakages are typically less than 10pA at room temperatures. The 2N3460 has a cutoff voltage of less than 1.8V ideal for low-level power supplies. The TO-18 package is hermetically sealed and suitable f.
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MAXIMUM RATINGS Rating Drain-Gate Voltage Gate-Source Voltage Gate Current @Total Device Dissipation T/^ = 25°C Derate a.
n-channel JFETs designed for • • • • Small-Signal Low Noise Amplifiers H Performance Curves NP See Section 4 BENEFITS •.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2N3458 |
Motorola |
LOW-FREQUENCY / LOW NOISE JFET | |
2 | 2N3458 |
InterFET |
N-Channel JFET | |
3 | 2N3458 |
Central Semiconductor |
N-Channel FET | |
4 | 2N3458 |
Siliconix |
n-channel JFET | |
5 | 2N340 |
New Jersey Semi-Conductor |
N-P-N GROWN SILICON TRANSISTORS | |
6 | 2N341 |
New Jersey Semi-Conductor |
N-P-N GROWN SILICON TRANSISTORS | |
7 | 2N3410DCSM |
Semelab Plc |
Dual Bipolar NPN Devices | |
8 | 2N3414 |
Micro Electronics |
NPN SILICON TRANSISTOR | |
9 | 2N3414 |
Central Semiconductor |
NPN SILICON TRANSISTOR | |
10 | 2N3415 |
Fairchild Semiconductor |
NPN General Purpose Amplifier | |
11 | 2N3415 |
Central Semiconductor |
NPN SILICON TRANSISTOR | |
12 | 2N3415 |
NTE |
Silicon NPN Transistor |