n-cha'1nel JFETs
design1ed for • • •
• Small-Si!~nal Low Power Applicati
VGS "" 0
7
gf,
1-
8
0 Y
90ss
I- N
A 9 M Coss
,- I C
10
Ciss
Common-Source Forward TranscondL ctance
1000
CommonFeatures
·Source Output Conductance
Common-Source Output Capacltancf
4000 80 3
Common-Source Input CapacitancE
20
600 2500 30 3 20
300 2500
VOS = 30 V (Note 3), VGS '" 0
}.Jmho
15
VOS"30V,VGS"0 3
pF 20
VOS = a-v, VGS = 0
f '" 1 kHz f = 1 MHz
"JEDEC registered data.
NP
NOTES,
1. Due to symmetrical geometnl, these units may be operated with source and drain leads interchanged.
2. Derate linearly to 150°C free-air temperature at rate of 2.1 mwtC.
3. To minimize h.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2N3369 |
Siliconix |
n-channel JFET | |
2 | 2N3300 |
Motorola |
GENERAL PURPOSE TRANSISTOR | |
3 | 2N3300 |
Central |
Small Signal Transistors | |
4 | 2N3300 |
Seme LAB |
Bipolar NPN Device | |
5 | 2N3300 |
New Jersey Semi-Conductor |
Transistor | |
6 | 2N3301 |
Motorola |
GENERAL PURPOSE TRANSISTOR | |
7 | 2N3301 |
Central Semiconductor |
Small Signal Transistors | |
8 | 2N3302 |
Motorola |
GENERAL PURPOSE TRANSISTOR | |
9 | 2N3302 |
New Jersey Semi-Conductor |
Transistor | |
10 | 2N3302 |
Central Semiconductor |
Small Signal Transistors | |
11 | 2N3303 |
Motorola |
NPN silicon annular transistor | |
12 | 2N3304 |
Motorola |
PNP silicon annular transistor |