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File No. 54 _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ __ oornLJiJ Power Transistors Solid State Division 2N3263 2N3264 2N3265 2N3266 ~ H-1354 ~3263.2N3264 IRADIAL) .11 y . . .H-1785 J 2N3265:2N3266 IJEDEC TO-631 High-Power,High-Speed, High-Current Silicon N-P-N Power Transistors Epitaxial Types for Aerospace, Military, and In.
• Low saturation voltages -
2N3263 and 2N3265 VCE(sad = 0.75 V (max.) at IC = 15 A VBE(sat) = 1.60 V (max.) at IC = 15 A
2N3264 and 2N3266
= =vCE (sad 1.20 V (max.) at Ic 15 A
VBE (sat) = 1_80 V (max.) at IC = 15 A
• High reliability and uniformity of characteristics
• High power dissipation
• Fast rise time at high collector current -
0.2/1s at 10 A (typical)
RCA-2N3263, 2N3264, 2N3265, and 2N3266a are n-p-n epitaxial silicon power transistors designed for high-reliability aerospace, military, and industrial equipment. Their high current-handling capability and fast switching speed make the.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2N3264 |
RCA |
Power Transistors |
|
| 2 | 2N3265 |
RCA |
Power Transistors |
|
| 3 | 2N3266 |
RCA |
Power Transistors |
|
| 4 | 2N320 |
Motorola |
PNP germanium power transistors |
|
| 5 | 2N3202 |
Seme LAB |
Bipolar PNP Device |
|
| 6 | 2N3202 |
Solitron Devices |
PNP Silicon Power Transistor |
|
| 7 | 2N3203 |
SSDI |
PNP Transistor |
|
| 8 | 2N3203 |
Solitron Devices |
PNP Silicon Power Transistor |
|
| 9 | 2N3204 |
SSDI |
PNP Transistor |
|
| 10 | 2N3204 |
Solitron Devices |
PNP Silicon Power Transistor |
|
| 11 | 2N3209 |
STMicroelectronics |
Silicon Planar PNP Transistor |
|
| 12 | 2N3209 |
Motorola |
PNP SILICON TRANSISTOR |
|