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·Excellent Safe Operating Area ·With TO-3 package ·Low collector saturation voltage ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·For medium-speed switching and amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -40.
Voltage IC= -2A; IB= -0.3A VBE(sat) Base-Emitter Saturation Voltage IC= -2A; VCE=-0.3V ICEO Collector Cutoff Current VCE= -40V; IB=0 IEBO Emitter Cutoff Current VEB= -5V; IC=0 hFE DC Current Gain IC= -2A ; VCE= -3V 2N3183 MIN MAX UNIT -1.0 V -2.0 V -5.0 mA -1.0 mA 10 30 Notice： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applications of our products. ISC products are intended for usage in general electronic equipment. The products are not.
2N3183 - SavantIC
·With TO-3 package ·Excellent safe operating area ·Low collector saturation voltage APPLICATIONS ·For medium-speed swi.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2N3184 |
Inchange Semiconductor |
Silicon PNP Power Transistor |
|
| 2 | 2N3185 |
Inchange Semiconductor |
Silicon PNP Power Transistor |
|
| 3 | 2N3186 |
Inchange Semiconductor |
Silicon PNP Power Transistor |
|
| 4 | 2N3187 |
SSDI |
PNP Transistor |
|
| 5 | 2N3188 |
SSDI |
PNP Transistor |
|
| 6 | 2N3189 |
SSDI |
PNP Transistor |
|
| 7 | 2N3107 |
Micro Electronics |
NPN SILICON EPITAXIAL TRANSISTOR |
|
| 8 | 2N3107 |
Micro Electronics |
(2N3107 - 2N3110) NPN Silicon AF Medium Amplifiers and Switches |
|
| 9 | 2N3107 |
Central |
Small Signal Transistors |
|
| 10 | 2N3108 |
Semelab Plc |
Bipolar NPN Device |
|
| 11 | 2N3108 |
Micro Electronics |
NPN SILICON EPITAXIAL TRANSISTOR |
|
| 12 | 2N3108 |
Comset Semiconductor |
NPN transistor |
|