2N3021 thru 2N3026 (SILICON) CASE1~ (TO·3) ~ PNP silicon power transistors for Class C power amplifiers, high-current core switching and high-speed switching and amplifier applications. MAXIMUM RATINGS Rating Collector-Base Voltage Collector-Emitter Voltage Symbol 2N3021 2N3024 VCB 30 VCEO 30 2N3022 2N3025 45 45 Emitter-Base Voltage VEB 4.0 Co.
Ade, IS = 0)
(Ie = 50 mAde, IS = 0) (IC = 20 mAde, IS = 0)
DC Current Gain
(IC = 1.0 Adc, VCE =2 Vde)
2N3021, 2N3024 2N3022, 2N3025 2N3023, 2N3026 2N3021, 2N3024 2N3022, 2N3025 2N3023, 2N3026
2N3021, 2N3024 2N3022, 2N3025 2N3023, 2N3026
2N3021, 2N3022, 2N3023 2N3024, 2N3025, 2N3026
SymbDI
Min
lEBO
-
IcEX
------
BVCEO
•
30
45
60
hFE 20 50
Co!1e~tor-Emitter Saturation Voltage
(Ie = 3 Ade, IS = 0.3 Ade)
Base-Emitter Saturation Voltage
(Ie = 3 Ade, IS = 0.3 Ade)
Small Signal Current Gain
(Ic = 0.5 Ade, VCE = IS Vde, ! =30 MHz)
Swttchlng Times
(Ic = 1 Ade, lSI = IS2 =100 mAde)
2N3021, .
3 - 3.5 AMP PNP Sorted by IC, then VCEO Part Number mIaCx (A) mVCaExO (V) Ratings based on 25˚C case temperature unl.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2N3020 |
Micro Electronics |
NPN Silicon Transistor | |
2 | 2N3020 |
Motorola |
NPN Transistor | |
3 | 2N3020 |
Central Semiconductor |
NPN Transistor | |
4 | 2N3020 |
Comset Semiconductor |
SILICON PLANAR EPITAXIAL TRANSISTORS | |
5 | 2N3020 |
CDIL |
NPN SILICON PLANAR EPITAXIAL TRANSISTORS | |
6 | 2N3020 |
Seme LAB |
Bipolar NPN Device | |
7 | 2N3021 |
Motorola |
PNP silicon power transistors | |
8 | 2N3021 |
SSDI |
PNP Transistor | |
9 | 2N3022 |
Motorola |
PNP silicon power transistors | |
10 | 2N3022 |
SSDI |
PNP Transistor | |
11 | 2N3023 |
Motorola |
PNP silicon power transistors | |
12 | 2N3023 |
SSDI |
PNP Transistor |