2N3025 - Motorola

2N3025 PNP silicon power transistors

2N3021 thru 2N3026 (SILICON) CASE1~ (TO·3) ~ PNP silicon power transistors for Class C power amplifiers, high-current core switching and high-speed switching and amplifier applications. MAXIMUM RATINGS Rating Collector-Base Voltage Collector-Emitter Voltage Symbol 2N3021 2N3024 VCB 30 VCEO 30 2N3022 2N3025 45 45 Emitter-Base Voltage VEB 4.0 Co.

Features

Ade, IS = 0) (Ie = 50 mAde, IS = 0) (IC = 20 mAde, IS = 0) DC Current Gain (IC = 1.0 Adc, VCE =2 Vde) 2N3021, 2N3024 2N3022, 2N3025 2N3023, 2N3026 2N3021, 2N3024 2N3022, 2N3025 2N3023, 2N3026 2N3021, 2N3024 2N3022, 2N3025 2N3023, 2N3026 2N3021, 2N3022, 2N3023 2N3024, 2N3025, 2N3026 SymbDI Min lEBO - IcEX ------ BVCEO
• 30 45 60 hFE 20 50 Co!1e~tor-Emitter Saturation Voltage (Ie = 3 Ade, IS = 0.3 Ade) Base-Emitter Saturation Voltage (Ie = 3 Ade, IS = 0.3 Ade) Small Signal Current Gain (Ic = 0.5 Ade, VCE = IS Vde, ! =30 MHz) Swttchlng Times (Ic = 1 Ade, lSI = IS2 =100 mAde) 2N3021, .