2N3019 MECHANICAL DATA Dimensions in mm (inches) 8.89 (0.35) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) NPN SILICON TRANSISTOR FEATURES • NPN High Voltage Planar Transistor • Hermetic TO39 Package 4.19 (0.165) 4.95 (0.195) 12.70 (0.500) min. 0.89 max. (0.035) 7.75 (0.305) 8.51 (0.335) dia. • Full Screening Options Available 5.08 (0.200) typ. 2 1 0.66 (0..
• NPN High Voltage Planar Transistor
• Hermetic TO39 Package
4.19 (0.165) 4.95 (0.195)
12.70 (0.500) min.
0.89 max. (0.035) 7.75 (0.305) 8.51 (0.335) dia.
• Full Screening Options Available
5.08 (0.200) typ.
2 1
0.66 (0.026) 1.14 (0.045) 0.71 (0.028) 0.86 (0.034)
2.54 (0.100)
3
45˚
TO39 PACKAGE
Underside View Pin 1 = Emitter Pin 2 = Base Pin 3 = Collector
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
VCBO VCEO VEBO IC PD PD PD PD Tj Tstg Rjc Rja Collector
– Base Voltage Collector
– Emitter Voltage Emitter
– Base Voltage Collector Current Total Device Dissipation @ .
TECHNICAL DATA LOW POWER NPN SILICON TRANSISTOR Qualified per MIL-PRF-19500/391 Devices 2N3019 2N3019S 2N3057A 2N370.
NPN medium power transistor in a TO-39 metal package. 1 handbook, halfpage 2 2N3019 PINNING PIN 1 2 3 emitter base coll.
2N3019, 2N3019S, 2N3700 Low Power Transistors NPN Silicon Features • MIL−PRF−19500/391 Qualified • Available as JAN, JAN.
The 2N3019 is a silicon Planar Epitaxial NPN transistor in Jedec TO-39 metal case, designed for high-current, high frequ.
INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 2N3019 ABSOLUTE MAXIMUM RATINGS(Ta=2.
SYMBOL VALUE Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Power Dissipatio.
2N3019 Silicon NPN Transistor Audio Output, Video, Driver TO−5 Type Package Absolute Maximum Ratings: (TA = +25C unles.
The CENTRAL SEMICONDUCTOR 2N3019, 2N3020 types are NPN silicon transistors designed for general purpose amplifier appli.
NPN SILICON TRANSISTOR 2N3019 • High Voltage, High Current Small Signal NPN Transistor. • Hermetic TO-39 Metal Package..
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2N3010 |
Motorola |
NPN silicon low-power transistor | |
2 | 2N3011 |
Central Semiconductor |
SILICON NPN TRANSISTOR | |
3 | 2N3011 |
Seme LAB |
Bipolar NPN Device | |
4 | 2N3011 |
Motorola |
SWITCHING TRANSISTOR | |
5 | 2N3012 |
Seme LAB |
Bipolar PNP Device | |
6 | 2N3012 |
Central Semiconductor |
Small Signal Transistors | |
7 | 2N3012 |
Motorola |
SWITCHING TRANSISTOR | |
8 | 2N3012CSM |
Seme LAB |
Bipolar PNP Device | |
9 | 2N3013 |
Central Semiconductor Corp |
NPN SILICON HIGH SPEED SWITCHING TRANSISTORS | |
10 | 2N3013 |
Motorola |
NPN SIlicon Small-Signal Transistor | |
11 | 2N3014 |
Central Semiconductor Corp |
NPN SILICON HIGH SPEED SWITCHING TRANSISTORS | |
12 | 2N3014 |
Motorola |
SWITCHING TRANSISTOR |